Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Interfacial ferroelectricity in marginally twisted 2D semiconductors
AU - Weston, Astrid
AU - Castanon, Eli
AU - Enaldiev, Vladimir
AU - Ferreira, Fabio
AU - Bhatacharjee, Shubhadeep
AU - Xu, Shuigang
AU - Corte-Leon, Hector
AU - Wu, Zefei
AU - Clark, Nickolas
AU - Summerfield, Alex
AU - Hashimoto, Teruo
AU - Gao, Yunze
AU - Wang, Wendong
AU - Hamer, Matthew
AU - Read, Harriet
AU - Fumagalli, Laura
AU - Kretinin, Andrey
AU - Haigh, Sarah
AU - Kazakova, Olga
AU - Geim, Andre
AU - Falko, Vladimir
AU - Gorbachev, Roman
PY - 2021/8/14
Y1 - 2021/8/14
N2 - Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.
AB - Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.
U2 - arXiv:2108.06489
DO - arXiv:2108.06489
M3 - Journal article
JO - arXiv
JF - arXiv
SN - 2331-8422
ER -