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(INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels

Research output: Contribution to conference - Without ISBN/ISSN Speech

Published
Publication date03/2016
<mark>Original language</mark>English
EventMEETING on Filed Effect Transistors: 2D Materials Field-Effect Transistors - Kaohsiung, Taiwan, Province of China
Duration: 14/03/201618/03/2016
http://emnmeeting.org/FET/

Conference

ConferenceMEETING on Filed Effect Transistors
CountryTaiwan, Province of China
CityKaohsiung
Period14/03/1618/03/16
Internet address