(INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels

Research output: Contribution to conference - Without ISBN/ISSN › Speech

Published

Publication date	03/2016
<mark>Original language</mark>	English
Event	MEETING on Filed Effect Transistors: 2D Materials Field-Effect Transistors - Kaohsiung, Taiwan, Province of China Duration: 14/03/2016 → 18/03/2016 http://emnmeeting.org/FET/

Conference	MEETING on Filed Effect Transistors
Country/Territory	Taiwan, Province of China
City	Kaohsiung
Period	14/03/16 → 18/03/16
Internet address	http://emnmeeting.org/FET/

Research