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(INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels

Research output: Contribution to conference - Without ISBN/ISSN › Speech

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(INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels. / Adamopoulos, George.
2016. MEETING on Filed Effect Transistors, Kaohsiung, Taiwan, Province of China.

Research output: Contribution to conference - Without ISBN/ISSN › Speech

Harvard

Adamopoulos, G 2016, '(INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels', MEETING on Filed Effect Transistors, Kaohsiung, Taiwan, Province of China, 14/03/16 - 18/03/16. <http://emnmeeting.org/FET/invited-speakers/2d-materials-field-effect-transistors/>

APA

Adamopoulos, G. (2016). (INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels. MEETING on Filed Effect Transistors, Kaohsiung, Taiwan, Province of China. http://emnmeeting.org/FET/invited-speakers/2d-materials-field-effect-transistors/

Vancouver

Adamopoulos G. (INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels. 2016. MEETING on Filed Effect Transistors, Kaohsiung, Taiwan, Province of China.

Author

Adamopoulos, George. / (INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels. MEETING on Filed Effect Transistors, Kaohsiung, Taiwan, Province of China.

Bibtex

@conference{8388cf23e9da4e8e932be187a451251a,
title = "(INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels",
author = "George Adamopoulos",
year = "2016",
month = mar,
language = "English",
note = "MEETING on Filed Effect Transistors : 2D Materials Field-Effect Transistors ; Conference date: 14-03-2016 Through 18-03-2016",
url = "http://emnmeeting.org/FET/",

}

RIS

TY - CONF

T1 - (INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels

AU - Adamopoulos, George

PY - 2016/3

Y1 - 2016/3

M3 - Speech

T2 - MEETING on Filed Effect Transistors

Y2 - 14 March 2016 through 18 March 2016

ER -