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Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

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Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots. / Nowozin, T.; Marent, A.; Bonato, L. et al.
In: Physical review B, Vol. 86, No. 3, 035305, 06.07.2012, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Nowozin, T, Marent, A, Bonato, L, Schliwa, A, Bimberg, D, Smakman, EP, Garleff, JK, Koenraad, PM, Young, RJ & Hayne, M 2012, 'Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots', Physical review B, vol. 86, no. 3, 035305, pp. -. https://doi.org/10.1103/PhysRevB.86.035305

APA

Nowozin, T., Marent, A., Bonato, L., Schliwa, A., Bimberg, D., Smakman, E. P., Garleff, J. K., Koenraad, P. M., Young, R. J., & Hayne, M. (2012). Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots. Physical review B, 86(3), -. Article 035305. https://doi.org/10.1103/PhysRevB.86.035305

Vancouver

Nowozin T, Marent A, Bonato L, Schliwa A, Bimberg D, Smakman EP et al. Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots. Physical review B. 2012 Jul 6;86(3):-. 035305. doi: 10.1103/PhysRevB.86.035305

Author

Nowozin, T. ; Marent, A. ; Bonato, L. et al. / Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots. In: Physical review B. 2012 ; Vol. 86, No. 3. pp. -.

Bibtex

@article{7cccaa4a4cbb4c4fa710012e9ecf3949,
title = "Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots",
abstract = "We present structural, electrical, and theoretical investigations of self-assembled type-II GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional scanning tunneling microscopy (X-STM) the morphology of the QDs is determined. The QDs are of high purity (similar to 100% GaSb content) and have most likely the shape of a truncated pyramid. The average heights of the QDs are 4-6 nm with average base lengths between 9 and 14 nm. Samples with a QD layer embedded into a pn-diode structure are studied with deep-level transient spectroscopy (DLTS), yielding a hole localization energy in the QDs of 609 meV. Based on the X-STM results the electronic structure of the QDs is calculated using 8-band k.p theory. The theoretical localization energies are found to be in good agreement with the DLTS results. Our results also allow us to estimate how variations in size and shape of the dots influence the hole localization energy.",
author = "T. Nowozin and A. Marent and L. Bonato and A. Schliwa and D. Bimberg and Smakman, {E. P.} and Garleff, {J. K.} and Koenraad, {P. M.} and Young, {R. J.} and M. Hayne",
note = "{\textcopyright}2012 American Physical Society",
year = "2012",
month = jul,
day = "6",
doi = "10.1103/PhysRevB.86.035305",
language = "English",
volume = "86",
pages = "--",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "3",

}

RIS

TY - JOUR

T1 - Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

AU - Nowozin, T.

AU - Marent, A.

AU - Bonato, L.

AU - Schliwa, A.

AU - Bimberg, D.

AU - Smakman, E. P.

AU - Garleff, J. K.

AU - Koenraad, P. M.

AU - Young, R. J.

AU - Hayne, M.

N1 - ©2012 American Physical Society

PY - 2012/7/6

Y1 - 2012/7/6

N2 - We present structural, electrical, and theoretical investigations of self-assembled type-II GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional scanning tunneling microscopy (X-STM) the morphology of the QDs is determined. The QDs are of high purity (similar to 100% GaSb content) and have most likely the shape of a truncated pyramid. The average heights of the QDs are 4-6 nm with average base lengths between 9 and 14 nm. Samples with a QD layer embedded into a pn-diode structure are studied with deep-level transient spectroscopy (DLTS), yielding a hole localization energy in the QDs of 609 meV. Based on the X-STM results the electronic structure of the QDs is calculated using 8-band k.p theory. The theoretical localization energies are found to be in good agreement with the DLTS results. Our results also allow us to estimate how variations in size and shape of the dots influence the hole localization energy.

AB - We present structural, electrical, and theoretical investigations of self-assembled type-II GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional scanning tunneling microscopy (X-STM) the morphology of the QDs is determined. The QDs are of high purity (similar to 100% GaSb content) and have most likely the shape of a truncated pyramid. The average heights of the QDs are 4-6 nm with average base lengths between 9 and 14 nm. Samples with a QD layer embedded into a pn-diode structure are studied with deep-level transient spectroscopy (DLTS), yielding a hole localization energy in the QDs of 609 meV. Based on the X-STM results the electronic structure of the QDs is calculated using 8-band k.p theory. The theoretical localization energies are found to be in good agreement with the DLTS results. Our results also allow us to estimate how variations in size and shape of the dots influence the hole localization energy.

U2 - 10.1103/PhysRevB.86.035305

DO - 10.1103/PhysRevB.86.035305

M3 - Journal article

VL - 86

SP - -

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 3

M1 - 035305

ER -