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    Rights statement: Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 116, 2020 and may be found at http://dx.doi.org/10.1063/1.5142699 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

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Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress. / Paxinos, Kosta; Antoniou, Giorgos; Afouxenidis, Dimitrios et al.
In: Applied Physics Letters, Vol. 116, No. 16, 163505, 20.04.2020.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Paxinos, K, Antoniou, G, Afouxenidis, D, Mohamed, A, Dikko, U, Tsitsimpelis, I, Milne, WI, Nathan, A & Adamopoulos, G 2020, 'Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress', Applied Physics Letters, vol. 116, no. 16, 163505. https://doi.org/10.1063/1.5142699

APA

Paxinos, K., Antoniou, G., Afouxenidis, D., Mohamed, A., Dikko, U., Tsitsimpelis, I., Milne, W. I., Nathan, A., & Adamopoulos, G. (2020). Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress. Applied Physics Letters, 116(16), Article 163505. https://doi.org/10.1063/1.5142699

Vancouver

Paxinos K, Antoniou G, Afouxenidis D, Mohamed A, Dikko U, Tsitsimpelis I et al. Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress. Applied Physics Letters. 2020 Apr 20;116(16):163505. doi: 10.1063/1.5142699

Author

Paxinos, Kosta ; Antoniou, Giorgos ; Afouxenidis, Dimitrios et al. / Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress. In: Applied Physics Letters. 2020 ; Vol. 116, No. 16.

Bibtex

@article{b0c2916b8f3749f39ff7fbfa3730b11f,
title = "Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress",
abstract = "We have investigated solution-processed tungsten-doped crystalline indium oxide (In2O3:W) as a function of the W content and their implementation in TFTs also employing spray coated Y2O3 gate dielectrics, and gold source and drain contacts. We showed that tungsten doping practically has no effect on the optical band gap whereas it shifts up the Urbach tail energy of In2O3:W films. The TFT performance employing In2O3:W channels also seems to decline at high tungsten concentration. Negative and positive bias stress under (dark) ambient conditions of TFTs employing In2O3:W(0.1 at%) showed remarkable improvement in their stability characteristics compared to the un-doped ones. This is evidenced by significantly smaller changes of the threshold voltage and subthreshold swing with insignificant change of the electron mobility that was practically unaffected under negative bias voltage. The negative bias stress results were interpreted in terms of the higher W-O bond dissociation energy compared to that of In-O, and the consequent oxygen vacancy suppression. However the positive bias stability results in a reduced accumulation of electrons in the back channel due to atmospheric oxygen absorption. The results presented in this report demonstrate the potential for stable, low operational voltage, high performance metal oxide-based TFTs employing gate dielectrics also grown from solutions, at low manufacturing cost.",
author = "Kosta Paxinos and Giorgos Antoniou and Dimitrios Afouxenidis and Ahmed Mohamed and Umar Dikko and Ioannis Tsitsimpelis and Milne, {William I.} and Arokia Nathan and George Adamopoulos",
note = "Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 116, 2020 and may be found at http://dx.doi.org/10.1063/1.5142699 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. ",
year = "2020",
month = apr,
day = "20",
doi = "10.1063/1.5142699",
language = "English",
volume = "116",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "16",

}

RIS

TY - JOUR

T1 - Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

AU - Paxinos, Kosta

AU - Antoniou, Giorgos

AU - Afouxenidis, Dimitrios

AU - Mohamed, Ahmed

AU - Dikko, Umar

AU - Tsitsimpelis, Ioannis

AU - Milne, William I.

AU - Nathan, Arokia

AU - Adamopoulos, George

N1 - Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 116, 2020 and may be found at http://dx.doi.org/10.1063/1.5142699 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2020/4/20

Y1 - 2020/4/20

N2 - We have investigated solution-processed tungsten-doped crystalline indium oxide (In2O3:W) as a function of the W content and their implementation in TFTs also employing spray coated Y2O3 gate dielectrics, and gold source and drain contacts. We showed that tungsten doping practically has no effect on the optical band gap whereas it shifts up the Urbach tail energy of In2O3:W films. The TFT performance employing In2O3:W channels also seems to decline at high tungsten concentration. Negative and positive bias stress under (dark) ambient conditions of TFTs employing In2O3:W(0.1 at%) showed remarkable improvement in their stability characteristics compared to the un-doped ones. This is evidenced by significantly smaller changes of the threshold voltage and subthreshold swing with insignificant change of the electron mobility that was practically unaffected under negative bias voltage. The negative bias stress results were interpreted in terms of the higher W-O bond dissociation energy compared to that of In-O, and the consequent oxygen vacancy suppression. However the positive bias stability results in a reduced accumulation of electrons in the back channel due to atmospheric oxygen absorption. The results presented in this report demonstrate the potential for stable, low operational voltage, high performance metal oxide-based TFTs employing gate dielectrics also grown from solutions, at low manufacturing cost.

AB - We have investigated solution-processed tungsten-doped crystalline indium oxide (In2O3:W) as a function of the W content and their implementation in TFTs also employing spray coated Y2O3 gate dielectrics, and gold source and drain contacts. We showed that tungsten doping practically has no effect on the optical band gap whereas it shifts up the Urbach tail energy of In2O3:W films. The TFT performance employing In2O3:W channels also seems to decline at high tungsten concentration. Negative and positive bias stress under (dark) ambient conditions of TFTs employing In2O3:W(0.1 at%) showed remarkable improvement in their stability characteristics compared to the un-doped ones. This is evidenced by significantly smaller changes of the threshold voltage and subthreshold swing with insignificant change of the electron mobility that was practically unaffected under negative bias voltage. The negative bias stress results were interpreted in terms of the higher W-O bond dissociation energy compared to that of In-O, and the consequent oxygen vacancy suppression. However the positive bias stability results in a reduced accumulation of electrons in the back channel due to atmospheric oxygen absorption. The results presented in this report demonstrate the potential for stable, low operational voltage, high performance metal oxide-based TFTs employing gate dielectrics also grown from solutions, at low manufacturing cost.

U2 - 10.1063/1.5142699

DO - 10.1063/1.5142699

M3 - Journal article

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 163505

ER -