Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions

Physics

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https://doi.org/10.1063/1.362481
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Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions. / Greally, M G ; Hayne, M ; Usher, A et al.
In: Journal of Applied Physics, Vol. 79, No. 11, 01.06.1996, p. 8465-8469.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Greally, MG, Hayne, M, Usher, A, Hill, G & Hopkinson, M 1996, 'Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions', Journal of Applied Physics, vol. 79, no. 11, pp. 8465-8469. https://doi.org/10.1063/1.362481

APA

Greally, M. G., Hayne, M., Usher, A., Hill, G., & Hopkinson, M. (1996). Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions. Journal of Applied Physics, 79(11), 8465-8469. https://doi.org/10.1063/1.362481

Vancouver

Greally MG, Hayne M, Usher A, Hill G, Hopkinson M. Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions. Journal of Applied Physics. 1996 Jun 1;79(11):8465-8469. doi: 10.1063/1.362481

Author

Greally, M G ; Hayne, M ; Usher, A et al. / Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions. In: Journal of Applied Physics. 1996 ; Vol. 79, No. 11. pp. 8465-8469.

Bibtex

@article{365296e285a644948b882200b3789f04,

title = "Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions",

abstract = "We report an investigation of the scattering mechanisms affecting the two-dimensional electron system in modulation-doped Ga0.47In0.53As-Al0.48In0.52As single heterojunctions. Low-temperature magnetotransport measurements were used to determine the dependence of the electron mobility mu on the density N-s of the two-dimensional carriers. For N-s less than or equal to 4 X 10(11) cm(-2), we find that mu increases with N-s, leveling off as N-s is further increased. This behavior is a clear indication that, contrary to some theoretical predictions, mu is chiefly limited by ionized-impurity scattering in this regime. We develop a theoretical model of the scattering mechanisms present in our systems whose results agree with our experiments. We find that alloy and interface-roughness scattering become important only when N-s greater than or equal to 5 X 10(11) cm(-2). (C) 1996 American Institute of Physics.",

author = "Greally, {M G} and M Hayne and A Usher and G Hill and M Hopkinson",

year = "1996",

month = jun,

day = "1",

doi = "10.1063/1.362481",

language = "English",

volume = "79",

pages = "8465--8469",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AMER INST PHYSICS",

number = "11",

}

RIS

TY - JOUR

T1 - Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions

AU - Greally, M G

AU - Hayne, M

AU - Usher, A

AU - Hill, G

AU - Hopkinson, M

PY - 1996/6/1

Y1 - 1996/6/1

N2 - We report an investigation of the scattering mechanisms affecting the two-dimensional electron system in modulation-doped Ga0.47In0.53As-Al0.48In0.52As single heterojunctions. Low-temperature magnetotransport measurements were used to determine the dependence of the electron mobility mu on the density N-s of the two-dimensional carriers. For N-s less than or equal to 4 X 10(11) cm(-2), we find that mu increases with N-s, leveling off as N-s is further increased. This behavior is a clear indication that, contrary to some theoretical predictions, mu is chiefly limited by ionized-impurity scattering in this regime. We develop a theoretical model of the scattering mechanisms present in our systems whose results agree with our experiments. We find that alloy and interface-roughness scattering become important only when N-s greater than or equal to 5 X 10(11) cm(-2). (C) 1996 American Institute of Physics.

AB - We report an investigation of the scattering mechanisms affecting the two-dimensional electron system in modulation-doped Ga0.47In0.53As-Al0.48In0.52As single heterojunctions. Low-temperature magnetotransport measurements were used to determine the dependence of the electron mobility mu on the density N-s of the two-dimensional carriers. For N-s less than or equal to 4 X 10(11) cm(-2), we find that mu increases with N-s, leveling off as N-s is further increased. This behavior is a clear indication that, contrary to some theoretical predictions, mu is chiefly limited by ionized-impurity scattering in this regime. We develop a theoretical model of the scattering mechanisms present in our systems whose results agree with our experiments. We find that alloy and interface-roughness scattering become important only when N-s greater than or equal to 5 X 10(11) cm(-2). (C) 1996 American Institute of Physics.

U2 - 10.1063/1.362481

DO - 10.1063/1.362481

M3 - Journal article

VL - 79

SP - 8465

EP - 8469

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -

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