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Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • George Adamopoulos
  • Stuart Thomas
  • Donal D. C. Bradley
  • Martyn A. McLachlan
  • Thomas D. Anthopoulos
Article number123503
<mark>Journal publication date</mark>21/03/2011
<mark>Journal</mark>Applied Physics Letters
Issue number12
Number of pages3
Pages (from-to)-
Publication StatusPublished
<mark>Original language</mark>English


We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.