Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 123503 |
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<mark>Journal publication date</mark> | 21/03/2011 |
<mark>Journal</mark> | Applied Physics Letters |
Issue number | 12 |
Volume | 98 |
Number of pages | 3 |
Pages (from-to) | - |
Publication Status | Published |
<mark>Original language</mark> | English |
We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.