Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air
AU - Adamopoulos, George
AU - Thomas, Stuart
AU - Bradley, Donal D. C.
AU - McLachlan, Martyn A.
AU - Anthopoulos, Thomas D.
PY - 2011/3/21
Y1 - 2011/3/21
N2 - We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.
AB - We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.
KW - ALUMINUM-OXIDE FILMS
KW - CHEMICAL-VAPOR-DEPOSITION
KW - ATOMIC LAYER DEPOSITION
KW - GATE DIELECTRICS
KW - ELECTRICAL-PROPERTIES
KW - Transparent Electronics
U2 - 10.1063/1.3568893
DO - 10.1063/1.3568893
M3 - Journal article
VL - 98
SP - -
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
M1 - 123503
ER -