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Magnetic field dependence of the current-voltage curve of a superconducting single electron transistor in a high impedance environment

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Magnetic field dependence of the current-voltage curve of a superconducting single electron transistor in a high impedance environment. / Pashkin, Yu. A.; Chen, C. D.; Haviland, D. B. et al.
In: Czechoslovak Journal of Physics, Vol. 46, No. 4, 1996, p. 2291-2292.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Pashkin, YA, Chen, CD, Haviland, DB & Kuzmin, LS 1996, 'Magnetic field dependence of the current-voltage curve of a superconducting single electron transistor in a high impedance environment', Czechoslovak Journal of Physics, vol. 46, no. 4, pp. 2291-2292. https://doi.org/10.1007/BF02571137

APA

Pashkin, Y. A., Chen, C. D., Haviland, D. B., & Kuzmin, L. S. (1996). Magnetic field dependence of the current-voltage curve of a superconducting single electron transistor in a high impedance environment. Czechoslovak Journal of Physics, 46(4), 2291-2292. https://doi.org/10.1007/BF02571137

Vancouver

Pashkin YA, Chen CD, Haviland DB, Kuzmin LS. Magnetic field dependence of the current-voltage curve of a superconducting single electron transistor in a high impedance environment. Czechoslovak Journal of Physics. 1996;46(4):2291-2292. doi: 10.1007/BF02571137

Author

Pashkin, Yu. A. ; Chen, C. D. ; Haviland, D. B. et al. / Magnetic field dependence of the current-voltage curve of a superconducting single electron transistor in a high impedance environment. In: Czechoslovak Journal of Physics. 1996 ; Vol. 46, No. 4. pp. 2291-2292.

Bibtex

@article{9063ba7c5e7647f284fa6fc854dc917c,
title = "Magnetic field dependence of the current-voltage curve of a superconducting single electron transistor in a high impedance environment",
abstract = "A superconducting single electron transistor has been investigated in a regime where its behavior is governed by the interplay of charging and Josephson effects with the corresponding energies Ec and EJ, respectively. Using a SQUID geometry, we were able to change the ratio of EJ/Ec (from EJ/Ec≈3.5 to EJ/Ec≈0.44). In zero magnetic field, we observed a sharp Coulomb blockade at low current followed by a negative slope of the I–V curve at higher current. Applying an external magnetic field perpendicular to the substrate and thus decreasing EJ/Ec we observed an increase of the blockade voltage from 10 μV up to 45 μV and a decrease of the crossover current from 5 nA down to 0.5 nA. Such a behavior of the transistor can be explained using a Bloch band picture.",
author = "Pashkin, {Yu. A.} and Chen, {C. D.} and Haviland, {D. B.} and Kuzmin, {L. S.}",
year = "1996",
doi = "10.1007/BF02571137",
language = "English",
volume = "46",
pages = "2291--2292",
journal = "Czechoslovak Journal of Physics",
issn = "1572-9486",
publisher = "Springer Netherlands",
number = "4",

}

RIS

TY - JOUR

T1 - Magnetic field dependence of the current-voltage curve of a superconducting single electron transistor in a high impedance environment

AU - Pashkin, Yu. A.

AU - Chen, C. D.

AU - Haviland, D. B.

AU - Kuzmin, L. S.

PY - 1996

Y1 - 1996

N2 - A superconducting single electron transistor has been investigated in a regime where its behavior is governed by the interplay of charging and Josephson effects with the corresponding energies Ec and EJ, respectively. Using a SQUID geometry, we were able to change the ratio of EJ/Ec (from EJ/Ec≈3.5 to EJ/Ec≈0.44). In zero magnetic field, we observed a sharp Coulomb blockade at low current followed by a negative slope of the I–V curve at higher current. Applying an external magnetic field perpendicular to the substrate and thus decreasing EJ/Ec we observed an increase of the blockade voltage from 10 μV up to 45 μV and a decrease of the crossover current from 5 nA down to 0.5 nA. Such a behavior of the transistor can be explained using a Bloch band picture.

AB - A superconducting single electron transistor has been investigated in a regime where its behavior is governed by the interplay of charging and Josephson effects with the corresponding energies Ec and EJ, respectively. Using a SQUID geometry, we were able to change the ratio of EJ/Ec (from EJ/Ec≈3.5 to EJ/Ec≈0.44). In zero magnetic field, we observed a sharp Coulomb blockade at low current followed by a negative slope of the I–V curve at higher current. Applying an external magnetic field perpendicular to the substrate and thus decreasing EJ/Ec we observed an increase of the blockade voltage from 10 μV up to 45 μV and a decrease of the crossover current from 5 nA down to 0.5 nA. Such a behavior of the transistor can be explained using a Bloch band picture.

U2 - 10.1007/BF02571137

DO - 10.1007/BF02571137

M3 - Journal article

VL - 46

SP - 2291

EP - 2292

JO - Czechoslovak Journal of Physics

JF - Czechoslovak Journal of Physics

SN - 1572-9486

IS - 4

ER -