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Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots

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Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots. / Godefroo, S ; Maes, J ; Hayne, M ; Moshchalkov, V V ; Henini, M ; Pulizzi, Fabio; Patane, A ; Eaves, L .

In: Journal of Applied Physics, Vol. 96, No. 5, 01.09.2004, p. 2535-2539.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Godefroo, S, Maes, J, Hayne, M, Moshchalkov, VV, Henini, M, Pulizzi, F, Patane, A & Eaves, L 2004, 'Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots', Journal of Applied Physics, vol. 96, no. 5, pp. 2535-2539. https://doi.org/10.1063/1.1767972

APA

Godefroo, S., Maes, J., Hayne, M., Moshchalkov, V. V., Henini, M., Pulizzi, F., Patane, A., & Eaves, L. (2004). Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots. Journal of Applied Physics, 96(5), 2535-2539. https://doi.org/10.1063/1.1767972

Vancouver

Author

Godefroo, S ; Maes, J ; Hayne, M ; Moshchalkov, V V ; Henini, M ; Pulizzi, Fabio ; Patane, A ; Eaves, L . / Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 5. pp. 2535-2539.

Bibtex

@article{6a58cc1139f740229be170c52931643c,
title = "Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots",
abstract = "We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12 T) magnetic fields to investigate the influence of substrate orientation and growth interruption (GI) on the electronic properties of InAs/GaAs quantum dots, grown by molecular beam epitaxy at 480 degreesC. Dot formation is very efficient on the (100) substrate: electronic confinement is already strong without GI and no significant change in confinement is observed with GI. On the contrary, for the (311)B substrate strong confinement of the charges only occurs after a GI is introduced. When longer GIs are applied the dots become higher. (C) 2004 American Institute of Physics.",
keywords = "MICROSCOPY, LASERS",
author = "S Godefroo and J Maes and M Hayne and Moshchalkov, {V V} and M Henini and Fabio Pulizzi and A Patane and L Eaves",
year = "2004",
month = sep,
day = "1",
doi = "10.1063/1.1767972",
language = "English",
volume = "96",
pages = "2535--2539",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "5",

}

RIS

TY - JOUR

T1 - Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots

AU - Godefroo, S

AU - Maes, J

AU - Hayne, M

AU - Moshchalkov, V V

AU - Henini, M

AU - Pulizzi, Fabio

AU - Patane, A

AU - Eaves, L

PY - 2004/9/1

Y1 - 2004/9/1

N2 - We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12 T) magnetic fields to investigate the influence of substrate orientation and growth interruption (GI) on the electronic properties of InAs/GaAs quantum dots, grown by molecular beam epitaxy at 480 degreesC. Dot formation is very efficient on the (100) substrate: electronic confinement is already strong without GI and no significant change in confinement is observed with GI. On the contrary, for the (311)B substrate strong confinement of the charges only occurs after a GI is introduced. When longer GIs are applied the dots become higher. (C) 2004 American Institute of Physics.

AB - We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12 T) magnetic fields to investigate the influence of substrate orientation and growth interruption (GI) on the electronic properties of InAs/GaAs quantum dots, grown by molecular beam epitaxy at 480 degreesC. Dot formation is very efficient on the (100) substrate: electronic confinement is already strong without GI and no significant change in confinement is observed with GI. On the contrary, for the (311)B substrate strong confinement of the charges only occurs after a GI is introduced. When longer GIs are applied the dots become higher. (C) 2004 American Institute of Physics.

KW - MICROSCOPY

KW - LASERS

U2 - 10.1063/1.1767972

DO - 10.1063/1.1767972

M3 - Journal article

VL - 96

SP - 2535

EP - 2539

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -