Home > Research > Publications & Outputs > Magneto-photoluminescence study of type-II char...

Research

Links

Text available via DOI:

Keywords

View graph of relations

Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2. / Hayne, Manus; Maes, J ; Manz, Y M et al.
In: Physica E: Low-dimensional Systems and Nanostructures, Vol. 21, No. 2-4, 03.2004, p. 257-260.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hayne, M, Maes, J, Manz, YM, Schmidt, OG & Moshchalkov, VV 2004, 'Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2', Physica E: Low-dimensional Systems and Nanostructures, vol. 21, no. 2-4, pp. 257-260. https://doi.org/10.1016/j.physe.2003.11.029

APA

Hayne, M., Maes, J., Manz, Y. M., Schmidt, O. G., & Moshchalkov, V. V. (2004). Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2. Physica E: Low-dimensional Systems and Nanostructures, 21(2-4), 257-260. https://doi.org/10.1016/j.physe.2003.11.029

Vancouver

Hayne M, Maes J, Manz YM, Schmidt OG, Moshchalkov VV. Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2. Physica E: Low-dimensional Systems and Nanostructures. 2004 Mar;21(2-4):257-260. doi: 10.1016/j.physe.2003.11.029

Author

Hayne, Manus ; Maes, J ; Manz, Y M et al. / Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2. In: Physica E: Low-dimensional Systems and Nanostructures. 2004 ; Vol. 21, No. 2-4. pp. 257-260.

Bibtex

@article{97ae7d0ccc62425cbfcd7ede88f4b5c5,
title = "Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2",
abstract = "We have studied the photoluminescence from GaInP2 grown by molecular beam epitaxy as a function of laser power, magnetic field and temperature. We show that the single luminescence peak observed in such samples arises from weakly bound (type-II) excitons in which the electrons are localised and the holes are free, and that it is the same as the additional low-energy peak typically observed in strongly CuPt-ordered GaInP2 grown by chemical vapour deposition techniques. We propose that the electron is confined in In-rich regions of the sample and the hole is delocalised by coupling between heavy-and light-hole bands. (C) 2003 Elsevier B.V. All rights reserved.",
keywords = "CuPt ordering, GalnP(2), MBE, pulsed magnetic fields, COMPOSITION MODULATION, SEMICONDUCTOR ALLOYS, OPTICAL-PROPERTIES, QUANTUM DOTS, BAND, ANISOTROPY, MASSES",
author = "Manus Hayne and J Maes and Manz, {Y M} and Schmidt, {O G} and Moshchalkov, {V V}",
year = "2004",
month = mar,
doi = "10.1016/j.physe.2003.11.029",
language = "English",
volume = "21",
pages = "257--260",
journal = "Physica E: Low-dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "2-4",

}

RIS

TY - JOUR

T1 - Magneto-photoluminescence study of type-II charge confinement in epitaxially grown GaInP2

AU - Hayne, Manus

AU - Maes, J

AU - Manz, Y M

AU - Schmidt, O G

AU - Moshchalkov, V V

PY - 2004/3

Y1 - 2004/3

N2 - We have studied the photoluminescence from GaInP2 grown by molecular beam epitaxy as a function of laser power, magnetic field and temperature. We show that the single luminescence peak observed in such samples arises from weakly bound (type-II) excitons in which the electrons are localised and the holes are free, and that it is the same as the additional low-energy peak typically observed in strongly CuPt-ordered GaInP2 grown by chemical vapour deposition techniques. We propose that the electron is confined in In-rich regions of the sample and the hole is delocalised by coupling between heavy-and light-hole bands. (C) 2003 Elsevier B.V. All rights reserved.

AB - We have studied the photoluminescence from GaInP2 grown by molecular beam epitaxy as a function of laser power, magnetic field and temperature. We show that the single luminescence peak observed in such samples arises from weakly bound (type-II) excitons in which the electrons are localised and the holes are free, and that it is the same as the additional low-energy peak typically observed in strongly CuPt-ordered GaInP2 grown by chemical vapour deposition techniques. We propose that the electron is confined in In-rich regions of the sample and the hole is delocalised by coupling between heavy-and light-hole bands. (C) 2003 Elsevier B.V. All rights reserved.

KW - CuPt ordering

KW - GalnP(2)

KW - MBE

KW - pulsed magnetic fields

KW - COMPOSITION MODULATION

KW - SEMICONDUCTOR ALLOYS

KW - OPTICAL-PROPERTIES

KW - QUANTUM DOTS

KW - BAND

KW - ANISOTROPY

KW - MASSES

U2 - 10.1016/j.physe.2003.11.029

DO - 10.1016/j.physe.2003.11.029

M3 - Journal article

VL - 21

SP - 257

EP - 260

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

ER -