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Manipulating Si(100) at 5 K using qPlus frequency modulated atomic force microscopy: role of defects and dynamics in the mechanical switching of atoms

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Manipulating Si(100) at 5 K using qPlus frequency modulated atomic force microscopy: role of defects and dynamics in the mechanical switching of atoms. / Sweetman, A.; Jarvis, S.; Danza, R. et al.
In: Physical review B, Vol. 84, No. 8, 085426, 25.08.2011.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Sweetman, A, Jarvis, S, Danza, R, Bamidele, J, Kantorovich, L & Moriarty, P 2011, 'Manipulating Si(100) at 5 K using qPlus frequency modulated atomic force microscopy: role of defects and dynamics in the mechanical switching of atoms', Physical review B, vol. 84, no. 8, 085426. https://doi.org/10.1103/PhysRevB.84.085426

APA

Sweetman, A., Jarvis, S., Danza, R., Bamidele, J., Kantorovich, L., & Moriarty, P. (2011). Manipulating Si(100) at 5 K using qPlus frequency modulated atomic force microscopy: role of defects and dynamics in the mechanical switching of atoms. Physical review B, 84(8), Article 085426. https://doi.org/10.1103/PhysRevB.84.085426

Vancouver

Sweetman A, Jarvis S, Danza R, Bamidele J, Kantorovich L, Moriarty P. Manipulating Si(100) at 5 K using qPlus frequency modulated atomic force microscopy: role of defects and dynamics in the mechanical switching of atoms. Physical review B. 2011 Aug 25;84(8):085426. doi: 10.1103/PhysRevB.84.085426

Author

Sweetman, A. ; Jarvis, S. ; Danza, R. et al. / Manipulating Si(100) at 5 K using qPlus frequency modulated atomic force microscopy : role of defects and dynamics in the mechanical switching of atoms. In: Physical review B. 2011 ; Vol. 84, No. 8.

Bibtex

@article{b07792b8192549e183c207ac7c4a308c,
title = "Manipulating Si(100) at 5 K using qPlus frequency modulated atomic force microscopy: role of defects and dynamics in the mechanical switching of atoms",
abstract = "We use small-amplitude qPlus frequency modulated atomic force microscopy (FM-AFM), at 5 K, to investigate the atomic-scale mechanical stability of the Si(100) surface. By operating at zero applied bias the effect of tunneling electrons is eliminated, demonstrating that surface manipulation can be performed by solely mechanical means. Striking differences in surface response are observed between different regions of the surface, most likely due to variations in strain associated with the presence of surface defects. We investigate the variation in local energy surface by ab initio simulation, and comment on the dynamics observed during force spectroscopy.",
author = "A. Sweetman and S. Jarvis and R. Danza and J. Bamidele and L. Kantorovich and P. Moriarty",
year = "2011",
month = aug,
day = "25",
doi = "10.1103/PhysRevB.84.085426",
language = "English",
volume = "84",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "8",

}

RIS

TY - JOUR

T1 - Manipulating Si(100) at 5 K using qPlus frequency modulated atomic force microscopy

T2 - role of defects and dynamics in the mechanical switching of atoms

AU - Sweetman, A.

AU - Jarvis, S.

AU - Danza, R.

AU - Bamidele, J.

AU - Kantorovich, L.

AU - Moriarty, P.

PY - 2011/8/25

Y1 - 2011/8/25

N2 - We use small-amplitude qPlus frequency modulated atomic force microscopy (FM-AFM), at 5 K, to investigate the atomic-scale mechanical stability of the Si(100) surface. By operating at zero applied bias the effect of tunneling electrons is eliminated, demonstrating that surface manipulation can be performed by solely mechanical means. Striking differences in surface response are observed between different regions of the surface, most likely due to variations in strain associated with the presence of surface defects. We investigate the variation in local energy surface by ab initio simulation, and comment on the dynamics observed during force spectroscopy.

AB - We use small-amplitude qPlus frequency modulated atomic force microscopy (FM-AFM), at 5 K, to investigate the atomic-scale mechanical stability of the Si(100) surface. By operating at zero applied bias the effect of tunneling electrons is eliminated, demonstrating that surface manipulation can be performed by solely mechanical means. Striking differences in surface response are observed between different regions of the surface, most likely due to variations in strain associated with the presence of surface defects. We investigate the variation in local energy surface by ab initio simulation, and comment on the dynamics observed during force spectroscopy.

U2 - 10.1103/PhysRevB.84.085426

DO - 10.1103/PhysRevB.84.085426

M3 - Journal article

VL - 84

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 8

M1 - 085426

ER -