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Measurement of the shot noise in a single-electron transistor

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Measurement of the shot noise in a single-electron transistor. / Kafanov, Sergey; Delsing, P.
In: Physical review B, Vol. 80, No. 15, 155320, 19.10.2009.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kafanov, S & Delsing, P 2009, 'Measurement of the shot noise in a single-electron transistor', Physical review B, vol. 80, no. 15, 155320. https://doi.org/10.1103/PhysRevB.80.155320

APA

Kafanov, S., & Delsing, P. (2009). Measurement of the shot noise in a single-electron transistor. Physical review B, 80(15), Article 155320. https://doi.org/10.1103/PhysRevB.80.155320

Vancouver

Kafanov S, Delsing P. Measurement of the shot noise in a single-electron transistor. Physical review B. 2009 Oct 19;80(15):155320. doi: 10.1103/PhysRevB.80.155320

Author

Kafanov, Sergey ; Delsing, P. / Measurement of the shot noise in a single-electron transistor. In: Physical review B. 2009 ; Vol. 80, No. 15.

Bibtex

@article{ca9f51bb19f14d3a88d5775406f48aed,
title = "Measurement of the shot noise in a single-electron transistor",
abstract = "We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.",
author = "Sergey Kafanov and P. Delsing",
year = "2009",
month = oct,
day = "19",
doi = "10.1103/PhysRevB.80.155320",
language = "English",
volume = "80",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "15",

}

RIS

TY - JOUR

T1 - Measurement of the shot noise in a single-electron transistor

AU - Kafanov, Sergey

AU - Delsing, P.

PY - 2009/10/19

Y1 - 2009/10/19

N2 - We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.

AB - We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.

U2 - 10.1103/PhysRevB.80.155320

DO - 10.1103/PhysRevB.80.155320

M3 - Journal article

AN - SCOPUS:72449205528

VL - 80

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 15

M1 - 155320

ER -