Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Measurement of the superconducting single electron transistor in a high impedance environment
AU - Haviland, D. B.
AU - Pashkin, Yuri
AU - Kuzmin, L. S.
PY - 1994/12
Y1 - 1994/12
N2 - We have fabricated and measured a capacitively coupled, superconducting, single electron transistor (S-SET) with special high resistance biasing leads. The leads provided a source of charge for the S-SET, with an impedance at high frequencies which was greater than the quantum resistance RQ = h/4e2 = 6.45 kΩ. The current-voltage characteristic of the S-SET biased in this way, showed a Coulomb blockade of Cooper pair tunneling. We have studied the modulation of this blockade with the gate voltage, measured at fixed DC current. The period of modulation in gate voltage was 2e/Cg, where Cg is the gate capacitance. We describe the dependence of this voltage modulation, and the crossover from 2e periodic to e periodic behavior, as a function of temperature, DC measurement current, and externally applied perpendicular magnetic field. The results obtained are compared with other experimental data on the S-SET in a low impedance environment where an explanation based on the parity model exists. © 1994.
AB - We have fabricated and measured a capacitively coupled, superconducting, single electron transistor (S-SET) with special high resistance biasing leads. The leads provided a source of charge for the S-SET, with an impedance at high frequencies which was greater than the quantum resistance RQ = h/4e2 = 6.45 kΩ. The current-voltage characteristic of the S-SET biased in this way, showed a Coulomb blockade of Cooper pair tunneling. We have studied the modulation of this blockade with the gate voltage, measured at fixed DC current. The period of modulation in gate voltage was 2e/Cg, where Cg is the gate capacitance. We describe the dependence of this voltage modulation, and the crossover from 2e periodic to e periodic behavior, as a function of temperature, DC measurement current, and externally applied perpendicular magnetic field. The results obtained are compared with other experimental data on the S-SET in a low impedance environment where an explanation based on the parity model exists. © 1994.
U2 - 10.1016/0921-4526(94)90079-5
DO - 10.1016/0921-4526(94)90079-5
M3 - Journal article
VL - 203
SP - 347
EP - 353
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 3-4
ER -