Standard
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. / Nash, G. R.; Przeslak, S. J.B.; Smith, S. J. et al.
International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA), 2009.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Harvard
Nash, GR, Przeslak, SJB, Smith, SJ, De Valicourt, G, Andreev, AD
, Carrington, PJ, Yin, M, Krier, A, Coomber, SD, Buckle, L, Emeny, MT & Ashley, T 2009,
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. in
International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA), International Quantum Electronics Conference, IQEC 2009, Baltimore, MD, United States,
31/05/09.
APA
Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D.
, Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., & Ashley, T. (2009).
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In
International Quantum Electronics Conference, IQEC 2009 Optical Society of America (OSA).
Vancouver
Author
Bibtex
@inproceedings{0ecf8e1b1ad9479d8880cf94604d64e7,
title = "Mid-infrared GaInSb/AlGaInSb quantum well laser diodes",
abstract = "Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.",
author = "Nash, {G. R.} and Przeslak, {S. J.B.} and Smith, {S. J.} and {De Valicourt}, G. and Andreev, {A. D.} and Carrington, {P. J.} and M. Yin and A. Krier and Coomber, {S. D.} and L. Buckle and Emeny, {M. T.} and T. Ashley",
year = "2009",
month = jan,
day = "1",
language = "English",
isbn = "9781557528698",
booktitle = "International Quantum Electronics Conference, IQEC 2009",
publisher = "Optical Society of America (OSA)",
note = "International Quantum Electronics Conference, IQEC 2009 ; Conference date: 31-05-2009 Through 05-06-2009",
}
RIS
TY - GEN
T1 - Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
AU - Nash, G. R.
AU - Przeslak, S. J.B.
AU - Smith, S. J.
AU - De Valicourt, G.
AU - Andreev, A. D.
AU - Carrington, P. J.
AU - Yin, M.
AU - Krier, A.
AU - Coomber, S. D.
AU - Buckle, L.
AU - Emeny, M. T.
AU - Ashley, T.
PY - 2009/1/1
Y1 - 2009/1/1
N2 - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.
AB - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.
UR - http://www.scopus.com/inward/record.url?scp=84897960931&partnerID=8YFLogxK
M3 - Conference contribution/Paper
SN - 9781557528698
BT - International Quantum Electronics Conference, IQEC 2009
PB - Optical Society of America (OSA)
T2 - International Quantum Electronics Conference, IQEC 2009
Y2 - 31 May 2009 through 5 June 2009
ER -
