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Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

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Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. / Nash, G. R.; Przeslak, S. J.B.; Smith, S. J.; De Valicourt, G.; Andreev, A. D.; Carrington, P. J.; Yin, M.; Krier, A.; Coomber, S. D.; Buckle, L.; Emeny, M. T.; Ashley, T.

International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA), 2009.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Nash, GR, Przeslak, SJB, Smith, SJ, De Valicourt, G, Andreev, AD, Carrington, PJ, Yin, M, Krier, A, Coomber, SD, Buckle, L, Emeny, MT & Ashley, T 2009, Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. in International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA), International Quantum Electronics Conference, IQEC 2009, Baltimore, MD, United States, 31/05/09.

APA

Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., & Ashley, T. (2009). Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In International Quantum Electronics Conference, IQEC 2009 Optical Society of America (OSA).

Vancouver

Nash GR, Przeslak SJB, Smith SJ, De Valicourt G, Andreev AD, Carrington PJ et al. Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA). 2009

Author

Nash, G. R. ; Przeslak, S. J.B. ; Smith, S. J. ; De Valicourt, G. ; Andreev, A. D. ; Carrington, P. J. ; Yin, M. ; Krier, A. ; Coomber, S. D. ; Buckle, L. ; Emeny, M. T. ; Ashley, T. / Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA), 2009.

Bibtex

@inproceedings{0ecf8e1b1ad9479d8880cf94604d64e7,
title = "Mid-infrared GaInSb/AlGaInSb quantum well laser diodes",
abstract = "Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.",
author = "Nash, {G. R.} and Przeslak, {S. J.B.} and Smith, {S. J.} and {De Valicourt}, G. and Andreev, {A. D.} and Carrington, {P. J.} and M. Yin and A. Krier and Coomber, {S. D.} and L. Buckle and Emeny, {M. T.} and T. Ashley",
year = "2009",
month = jan,
day = "1",
language = "English",
isbn = "9781557528698",
booktitle = "International Quantum Electronics Conference, IQEC 2009",
publisher = "Optical Society of America (OSA)",
note = "International Quantum Electronics Conference, IQEC 2009 ; Conference date: 31-05-2009 Through 05-06-2009",

}

RIS

TY - GEN

T1 - Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

AU - Nash, G. R.

AU - Przeslak, S. J.B.

AU - Smith, S. J.

AU - De Valicourt, G.

AU - Andreev, A. D.

AU - Carrington, P. J.

AU - Yin, M.

AU - Krier, A.

AU - Coomber, S. D.

AU - Buckle, L.

AU - Emeny, M. T.

AU - Ashley, T.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.

AB - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.

UR - http://www.scopus.com/inward/record.url?scp=84897960931&partnerID=8YFLogxK

M3 - Conference contribution/Paper

SN - 9781557528698

BT - International Quantum Electronics Conference, IQEC 2009

PB - Optical Society of America (OSA)

T2 - International Quantum Electronics Conference, IQEC 2009

Y2 - 31 May 2009 through 5 June 2009

ER -