Standard
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. / Nash, G. R.; Przeslak, S. J. B.; Smith, S. J. et al.
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York: IEEE, 2009. p. 2813-2814.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Harvard
Nash, GR, Przeslak, SJB, Smith, SJ, de Valicourt, G, Andreev, AD
, Carrington, PJ, Yin, M, Krier, A, Coomber, SD, Buckle, L, Emeny, MT & Ashley, T 2009,
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. in
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . IEEE, New York, pp. 2813-2814, Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), Baltimore,
2/06/09. <
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5226114>
APA
Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D.
, Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., & Ashley, T. (2009).
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on (pp. 2813-2814). IEEE.
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5226114Vancouver
Author
Nash, G. R. ; Przeslak, S. J. B. ; Smith, S. J. et al. /
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York : IEEE, 2009. pp. 2813-2814
Bibtex
@inproceedings{c8df9cea7d74471ba66e49d2546813de,
title = "Mid-infrared GaInSb/AlGaInSb quantum well laser diodes",
abstract = "Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at similar to 3.3 mu m at 200K with 1.1% strain in the QW. (C)2009 Optical Society of America",
author = "Nash, {G. R.} and Przeslak, {S. J. B.} and Smith, {S. J.} and {de Valicourt}, G. and Andreev, {A. D.} and Carrington, {P. J.} and M. Yin and A. Krier and Coomber, {S. D.} and L. Buckle and Emeny, {M. T.} and T. Ashley",
year = "2009",
language = "English",
isbn = "978-1-4244-5184-5",
pages = "2813--2814",
booktitle = "Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on",
publisher = "IEEE",
note = "Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009) ; Conference date: 02-06-2009 Through 04-06-2009",
}
RIS
TY - GEN
T1 - Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
AU - Nash, G. R.
AU - Przeslak, S. J. B.
AU - Smith, S. J.
AU - de Valicourt, G.
AU - Andreev, A. D.
AU - Carrington, P. J.
AU - Yin, M.
AU - Krier, A.
AU - Coomber, S. D.
AU - Buckle, L.
AU - Emeny, M. T.
AU - Ashley, T.
PY - 2009
Y1 - 2009
N2 - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at similar to 3.3 mu m at 200K with 1.1% strain in the QW. (C)2009 Optical Society of America
AB - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at similar to 3.3 mu m at 200K with 1.1% strain in the QW. (C)2009 Optical Society of America
M3 - Conference contribution/Paper
SN - 978-1-4244-5184-5
SP - 2813
EP - 2814
BT - Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
PB - IEEE
CY - New York
T2 - Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009)
Y2 - 2 June 2009 through 4 June 2009
ER -
