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Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

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Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. / Nash, G. R.; Przeslak, S. J. B.; Smith, S. J.; de Valicourt, G.; Andreev, A. D.; Carrington, P. J.; Yin, M.; Krier, A.; Coomber, S. D.; Buckle, L.; Emeny, M. T.; Ashley, T.

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York : IEEE, 2009. p. 2813-2814.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Nash, GR, Przeslak, SJB, Smith, SJ, de Valicourt, G, Andreev, AD, Carrington, PJ, Yin, M, Krier, A, Coomber, SD, Buckle, L, Emeny, MT & Ashley, T 2009, Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. in Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . IEEE, New York, pp. 2813-2814, Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), Baltimore, 2/06/09. <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5226114>

APA

Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T., & Ashley, T. (2009). Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on (pp. 2813-2814). IEEE. http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5226114

Vancouver

Nash GR, Przeslak SJB, Smith SJ, de Valicourt G, Andreev AD, Carrington PJ et al. Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York: IEEE. 2009. p. 2813-2814

Author

Nash, G. R. ; Przeslak, S. J. B. ; Smith, S. J. ; de Valicourt, G. ; Andreev, A. D. ; Carrington, P. J. ; Yin, M. ; Krier, A. ; Coomber, S. D. ; Buckle, L. ; Emeny, M. T. ; Ashley, T. / Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York : IEEE, 2009. pp. 2813-2814

Bibtex

@inproceedings{c8df9cea7d74471ba66e49d2546813de,
title = "Mid-infrared GaInSb/AlGaInSb quantum well laser diodes",
abstract = "Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at similar to 3.3 mu m at 200K with 1.1% strain in the QW. (C)2009 Optical Society of America",
author = "Nash, {G. R.} and Przeslak, {S. J. B.} and Smith, {S. J.} and {de Valicourt}, G. and Andreev, {A. D.} and Carrington, {P. J.} and M. Yin and A. Krier and Coomber, {S. D.} and L. Buckle and Emeny, {M. T.} and T. Ashley",
year = "2009",
language = "English",
isbn = "978-1-4244-5184-5",
pages = "2813--2814",
booktitle = "Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on",
publisher = "IEEE",
note = "Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009) ; Conference date: 02-06-2009 Through 04-06-2009",

}

RIS

TY - GEN

T1 - Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

AU - Nash, G. R.

AU - Przeslak, S. J. B.

AU - Smith, S. J.

AU - de Valicourt, G.

AU - Andreev, A. D.

AU - Carrington, P. J.

AU - Yin, M.

AU - Krier, A.

AU - Coomber, S. D.

AU - Buckle, L.

AU - Emeny, M. T.

AU - Ashley, T.

PY - 2009

Y1 - 2009

N2 - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at similar to 3.3 mu m at 200K with 1.1% strain in the QW. (C)2009 Optical Society of America

AB - Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at similar to 3.3 mu m at 200K with 1.1% strain in the QW. (C)2009 Optical Society of America

M3 - Conference contribution/Paper

SN - 978-1-4244-5184-5

SP - 2813

EP - 2814

BT - Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

PB - IEEE

CY - New York

T2 - Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009)

Y2 - 2 June 2009 through 4 June 2009

ER -