Final published version
Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review
Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review
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TY - CONF
T1 - Mid-infrared interband cascade light-emitting diodes with InAs/GaAßb superlattices on InAs substrates
T2 - Smart Photonic and Optoelectronic Integrated Circuits XXII
AU - Lu, Q.
AU - Zhou, Y.
AU - Chen, J.
AU - He, L.
AU - Krier, A.
AU - (SPIE), The Society of Photo-Optical Instrumentation Engineers
A2 - S., He
A2 - L., Vivien
N1 - Conference code: 158515 Export Date: 16 April 2020 CODEN: PSISD Correspondence Address: Lu, Q.; Physics Department, Lancaster UniversityUnited Kingdom; email: q.lu3@lancaster.ac.uk Funding details: Engineering and Physical Sciences Research Council, EPSRC, EP/P012035/1 Funding text 1: This work was supported by the EPSRC Grant of UK (No. EP/P012035/1). References: Krier, A., Yin, M., Smirnov, V., Batty, P., Carrington, P.J., Solovev, V., Sherstnev, V., The development of room temperature LEDs and lasers for the mid-infrared spectral range (2008) Phys. Status Solidi, 205 (1), pp. 129-143; Yang, R.Q., Infrared laser based on intersubband transitions in quantum wells (1995) Superlattices Microstruct, 17 (1), pp. 77-80; Lotfi, H., Li, L., Lei, L., Jiang, Y., Yang, R.Q., Klem, J.F., Johnson, M.B., Short-wavelength interband cascade infrared photodetectors operating above room temperature (2016) J. Appl. Phys, 119, p. 023105; Lei, L., Li, L., Huang, W., Massengale, J.A., Ye, H., Lotfi, H., Yang, R.Q., Johnson, M.B., Resonant tunneling and multiple negative differential conductance features in long wavelength interband cascade infrared photodetectors (2017) Appl. Phys. Lett, 111, p. 113504; Lotfi, H., Li, L., Ye, H., Hinkey, R.T., Lei, L., Yang, R.Q., Keay, J.C., Johnson, M.B., Interband cascade infrared photodetectors with long and very-long cutoff wavelengths (2015) Infrared Phys. Technol, 70, pp. 162-167; Lotfi, H., Li, L., Lei, L., Yang, R.Q., Klem, J.F., Johnson, M.B., Narrow-bandgap interband cascade thermophotovoltaic cells (2017) IEEE J. Photovoltaics, 7 (5), pp. 1462-1468; Ermolaev, M., Lin, Y., Shterengas, L., Hosoda, T., Kipshidze, G., Suchalkin, S., Belenky, G., GaSb-based type-i quantum well 3-3. 5 um cascade light emitting diodes (2018) IEEE Photonics Technol. Lett, 30 (9), pp. 869-872; Kim, C.S., Kim, M., Bewley, W.W., Merritt, C.D., Canedy, C.L., Warren, M.V., Vurgaftman, I., Meyer, J.R., Mid-infrared interband cascade light-emitting devices with improved radiance (2018) Proc. SPIE, p. 10540; Ricker, R.J., Provence, S.R., Norton, D.T., Boggess, T.F., Prineas, J.P., Broadband mid-infrared superlattice light-emitting diodes (2017) J. Appl. Phys, 121, p. 185701; Muhowski, A.J., Ricker, R.J., Boggess, T.F., Prineas, J.P., N-type anode layer, high-power MWIR superlattice LED (2017) Appl. Phys. Lett, 111, p. 243509; Prineas, J.P., Ricker, R.J., Muhowski, A., Bogh, C., Provence, S., Boggess, T.F., Cascading, efficiency, and broadband emission in mid-infrared superlattice light emitting diodes (SLEDs) (2017) Proc. SPIE, p. 10124; Murray, L.M., Norton, D.T., Olesberg, J.T., Boggess, T.F., Prineas, J.P., Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodes (2012) J. Vac. Sci. Technol. B, 30 (2), p. 021203; Prineas, J.P., Olesberg, J.T., Yager, J.R., Cao, C., Coretsopoulos, C., Reddy, M.H.M., Cascaded active regions in 2. 4m GaInAsSb light-emitting diodes for improved current efficiency (2006) Appl. Phys. Lett, 89, p. 211108; Abell, J., Kim, C.S., Bewley, W.W., Merritt, C.D., Canedy, C.L., Vurgaftman, I., Meyer, J.R., Kim, M., Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature (2014) Appl. Phys. Lett, 104 (26), p. 211108; Wang, F., Chen, J., Zhicheng, X., Zhou, Y., He, L., Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection (2017) Opt. Express, 25 (3), pp. 1629-1635; Wang, F., Chen, J., Xu, Z., Zhou, Y., He, L., InAs-based InAs/GaAsSb type-II superlattices: Growth and characterization (2015) J. Cryst. Growth, 416, pp. 130-133; Cheetham, K.J., Krier, A., Marko, I.P., Aldukhayel, A., Sweeney, S.J., Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes (2011) Appl. Phys. Lett, 99, p. 141110; Keen, J.A., Repiso, E., Lu, Q., Kesaria, M., Marshall, A.R.J., Krier, A., Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared (2018) Infrared Phys. Technol, 93, pp. 375-380
PY - 2020/2/1
Y1 - 2020/2/1
N2 - In this work, we report interband cascade light emitting diodes (ICLEDs) based on InAs/GaAßb superlattices emitting around 4.5 μm The ICLED structures were grown on InAs substrates by molecular beam epitaxy, which were composed of InAs/GaAßb superlattice emitters, InAs/AlAßb multi-quantum well (MQW) injection regions, and the GaAßb/AlAßb MQW tunneling regions. Both 5-stage and 2-stage ICLEDs were fabricated. The devices exhibited high output power, low series resistance and high wall-plug efficiency (WPE). At room temperature, radiances of 0.36 W/cm 2 sr and 0.19 W/cm 2 sr were achieved from the 5-stage and 2-stage ICLEDs respectively. At 80 K, the output power from the 5-stage ICLED reached 3.56 mW with 350 mA injection current, resulting in a WPE of around 0.5%. The efficiency was largely maintained with increasing injection. The thermal quenching of these ICLEDs from 20 K to 300 K was also significantly leß than other types of devices emitting at similar wavelengths. These results demonstrate that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.
AB - In this work, we report interband cascade light emitting diodes (ICLEDs) based on InAs/GaAßb superlattices emitting around 4.5 μm The ICLED structures were grown on InAs substrates by molecular beam epitaxy, which were composed of InAs/GaAßb superlattice emitters, InAs/AlAßb multi-quantum well (MQW) injection regions, and the GaAßb/AlAßb MQW tunneling regions. Both 5-stage and 2-stage ICLEDs were fabricated. The devices exhibited high output power, low series resistance and high wall-plug efficiency (WPE). At room temperature, radiances of 0.36 W/cm 2 sr and 0.19 W/cm 2 sr were achieved from the 5-stage and 2-stage ICLEDs respectively. At 80 K, the output power from the 5-stage ICLED reached 3.56 mW with 350 mA injection current, resulting in a WPE of around 0.5%. The efficiency was largely maintained with increasing injection. The thermal quenching of these ICLEDs from 20 K to 300 K was also significantly leß than other types of devices emitting at similar wavelengths. These results demonstrate that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.
KW - Interband cascade structures
KW - Mid-infrared LEDs
KW - Diodes
KW - Efficiency
KW - Electric resistance
KW - Gallium compounds
KW - Infrared devices
KW - Light emitting diodes
KW - Molecular beam epitaxy
KW - Photonic integration technology
KW - Semiconductor quantum wells
KW - Substrates
KW - Injection currents
KW - Interband cascade structure
KW - Interband cascades
KW - Midinfrared
KW - Multiquantum wells
KW - Series resistances
KW - Thermal quenching
KW - Wallplug efficiency
KW - III-V semiconductors
U2 - 10.1117/12.2544811
DO - 10.1117/12.2544811
M3 - Conference paper
Y2 - 1 February 2020 through 6 February 2020
ER -