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Mid-infrared whispering gallery lasers

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  • D A Wright
  • A Krier
  • V V Sherstnev
  • A Monakhov


This paper reports the first mid-infrared ring laser diode based on InAs and grown by liquid phase epitaxy (LPE). Coherent emission for a 200 μm ring resonator was obtained near 3.0 μm at 80 K. The individual modes exhibit hardly any wavelength shift with increasing injection current. The absence of a significant modal wavelength shift confirms that the emission originates from in-plane propagation around the inside perimeter of the mesa due to a whispering gallery mode which is facilitated by total internal reflection with high Q.