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Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions

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Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions. / Chen, Zi‐Zhen; Wu, Shun‐Da; Lin, Jin‐Liang et al.
In: Advanced Electronic Materials, Vol. 9, No. 2, 2201024, 28.02.2023.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Chen, ZZ, Wu, SD, Lin, JL, Chen, LC, Cao, JJ, Shao, X, Lambert, CJ & Zhang, HL 2023, 'Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions', Advanced Electronic Materials, vol. 9, no. 2, 2201024. https://doi.org/10.1002/aelm.202201024

APA

Chen, ZZ., Wu, SD., Lin, JL., Chen, LC., Cao, JJ., Shao, X., Lambert, C. J., & Zhang, HL. (2023). Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions. Advanced Electronic Materials, 9(2), Article 2201024. https://doi.org/10.1002/aelm.202201024

Vancouver

Chen ZZ, Wu SD, Lin JL, Chen LC, Cao JJ, Shao X et al. Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions. Advanced Electronic Materials. 2023 Feb 28;9(2):2201024. Epub 2022 Oct 26. doi: 10.1002/aelm.202201024

Author

Chen, Zi‐Zhen ; Wu, Shun‐Da ; Lin, Jin‐Liang et al. / Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions. In: Advanced Electronic Materials. 2023 ; Vol. 9, No. 2.

Bibtex

@article{99523f05270a4fe094c871c0ca7a84f8,
title = "Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions",
abstract = "Quantum interference (QI) plays a crucial role in determining the charge transport in molecular devices. In this work, the efficient modulation of QI in meta-phenylene ethylene oligomer molecular devices by a double N-substitution strategy is demonstrated. By altering the positions of two N atoms in the central ring with respect to the connecting sites, the molecular conductance can be tuned by more than one order of magnitude. Theoretical analysis, including magic ratio theory, orbital rule, and transmission simulations, reveals how the two N atoms synergistically modulate the molecule conductance between destructive QI and constructive QI states. Remarkably, addition of a second N atom does not simple reinforce the effect of the first; in contrast, it may completely cancel the effect of the first. Understanding the complex electronic interplay between the two N atoms in double N-substituted molecules paves a path toward utilization of heterocyclic aromatic hydrocarbons in molecular electronics.",
keywords = "Research Article, Research Articles, molecular electronic, nonequilibrium Green's function, quantum interferences, scanning tunneling microscopes, single‐molecule devices",
author = "Zi‐Zhen Chen and Shun‐Da Wu and Jin‐Liang Lin and Li‐Chuan Chen and Jing‐Jing Cao and Xiangfeng Shao and Lambert, {Colin J.} and Hao‐Li Zhang",
year = "2023",
month = feb,
day = "28",
doi = "10.1002/aelm.202201024",
language = "English",
volume = "9",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH",
number = "2",

}

RIS

TY - JOUR

T1 - Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions

AU - Chen, Zi‐Zhen

AU - Wu, Shun‐Da

AU - Lin, Jin‐Liang

AU - Chen, Li‐Chuan

AU - Cao, Jing‐Jing

AU - Shao, Xiangfeng

AU - Lambert, Colin J.

AU - Zhang, Hao‐Li

PY - 2023/2/28

Y1 - 2023/2/28

N2 - Quantum interference (QI) plays a crucial role in determining the charge transport in molecular devices. In this work, the efficient modulation of QI in meta-phenylene ethylene oligomer molecular devices by a double N-substitution strategy is demonstrated. By altering the positions of two N atoms in the central ring with respect to the connecting sites, the molecular conductance can be tuned by more than one order of magnitude. Theoretical analysis, including magic ratio theory, orbital rule, and transmission simulations, reveals how the two N atoms synergistically modulate the molecule conductance between destructive QI and constructive QI states. Remarkably, addition of a second N atom does not simple reinforce the effect of the first; in contrast, it may completely cancel the effect of the first. Understanding the complex electronic interplay between the two N atoms in double N-substituted molecules paves a path toward utilization of heterocyclic aromatic hydrocarbons in molecular electronics.

AB - Quantum interference (QI) plays a crucial role in determining the charge transport in molecular devices. In this work, the efficient modulation of QI in meta-phenylene ethylene oligomer molecular devices by a double N-substitution strategy is demonstrated. By altering the positions of two N atoms in the central ring with respect to the connecting sites, the molecular conductance can be tuned by more than one order of magnitude. Theoretical analysis, including magic ratio theory, orbital rule, and transmission simulations, reveals how the two N atoms synergistically modulate the molecule conductance between destructive QI and constructive QI states. Remarkably, addition of a second N atom does not simple reinforce the effect of the first; in contrast, it may completely cancel the effect of the first. Understanding the complex electronic interplay between the two N atoms in double N-substituted molecules paves a path toward utilization of heterocyclic aromatic hydrocarbons in molecular electronics.

KW - Research Article

KW - Research Articles

KW - molecular electronic

KW - nonequilibrium Green's function

KW - quantum interferences

KW - scanning tunneling microscopes

KW - single‐molecule devices

U2 - 10.1002/aelm.202201024

DO - 10.1002/aelm.202201024

M3 - Journal article

VL - 9

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 2

M1 - 2201024

ER -