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Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching

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Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching. / Lenk, Claudia; Hofmann, Martin; Lenk, Steve et al.
In: Microelectronic Engineering, Vol. 192, 15.05.2018, p. 77-82.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Lenk, C, Hofmann, M, Lenk, S, Kaestner, M, Ivanov, T, Krivoshapkina, Y, Nechepurenko, D, Volland, B, Holz, M, Ahmad, A, Reum, A, Wang, C, Jones, ME, Durrani, ZAK & Rangelow, IW 2018, 'Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching', Microelectronic Engineering, vol. 192, pp. 77-82. https://doi.org/10.1016/j.mee.2018.01.022

APA

Lenk, C., Hofmann, M., Lenk, S., Kaestner, M., Ivanov, T., Krivoshapkina, Y., Nechepurenko, D., Volland, B., Holz, M., Ahmad, A., Reum, A., Wang, C., Jones, M. E., Durrani, Z. A. K., & Rangelow, I. W. (2018). Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching. Microelectronic Engineering, 192, 77-82. https://doi.org/10.1016/j.mee.2018.01.022

Vancouver

Lenk C, Hofmann M, Lenk S, Kaestner M, Ivanov T, Krivoshapkina Y et al. Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching. Microelectronic Engineering. 2018 May 15;192:77-82. Epub 2018 Feb 1. doi: 10.1016/j.mee.2018.01.022

Author

Lenk, Claudia ; Hofmann, Martin ; Lenk, Steve et al. / Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching. In: Microelectronic Engineering. 2018 ; Vol. 192. pp. 77-82.

Bibtex

@article{c767753923cc4faa8964b53b759f14a5,
title = "Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching",
abstract = "Building low-power and high-density circuits requires new devices, which can be based for example on single electron effects. Single electron transistors (SET), which can operate at room temperature (RT), are candidates with high potential for the post-CMOS era. However, their fabrication relies typically on a statistical fabrication of quantum dots or positioning of nanoparticles or molecules between predefined electrodes. These methods hamper a scaled-up fabrication of RT-SETs. Here, we present a route for reproducible fabrication of RT-SETs on the basis of field-emission scanning probe lithography (FE-SPL) and cryogenic reactive ion etching. Due to the unique capabilities of our FE-SPL tool, enabling pre- and post-inspection of features, highly reliable patterning and precise feature alignment are obtained. The fabricated devices exhibit single electron effects at RT. A combination of this method with nanoimprint lithography would enable a high throughput and reproducible way of RT-SET fabrication.",
keywords = "Single electron transistor, Room temperature, Field-emission scanning probe lithography, Cryogenic reactive ion etching",
author = "Claudia Lenk and Martin Hofmann and Steve Lenk and Marcus Kaestner and Tzvetan Ivanov and Yana Krivoshapkina and Diana Nechepurenko and Burkhard Volland and Mathias Holz and Ahmad Ahmad and Alexander Reum and Chen Wang and Jones, {Mervyn E.} and Durrani, {Zahid A. K.} and Rangelow, {Ivo W.}",
year = "2018",
month = may,
day = "15",
doi = "10.1016/j.mee.2018.01.022",
language = "English",
volume = "192",
pages = "77--82",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching

AU - Lenk, Claudia

AU - Hofmann, Martin

AU - Lenk, Steve

AU - Kaestner, Marcus

AU - Ivanov, Tzvetan

AU - Krivoshapkina, Yana

AU - Nechepurenko, Diana

AU - Volland, Burkhard

AU - Holz, Mathias

AU - Ahmad, Ahmad

AU - Reum, Alexander

AU - Wang, Chen

AU - Jones, Mervyn E.

AU - Durrani, Zahid A. K.

AU - Rangelow, Ivo W.

PY - 2018/5/15

Y1 - 2018/5/15

N2 - Building low-power and high-density circuits requires new devices, which can be based for example on single electron effects. Single electron transistors (SET), which can operate at room temperature (RT), are candidates with high potential for the post-CMOS era. However, their fabrication relies typically on a statistical fabrication of quantum dots or positioning of nanoparticles or molecules between predefined electrodes. These methods hamper a scaled-up fabrication of RT-SETs. Here, we present a route for reproducible fabrication of RT-SETs on the basis of field-emission scanning probe lithography (FE-SPL) and cryogenic reactive ion etching. Due to the unique capabilities of our FE-SPL tool, enabling pre- and post-inspection of features, highly reliable patterning and precise feature alignment are obtained. The fabricated devices exhibit single electron effects at RT. A combination of this method with nanoimprint lithography would enable a high throughput and reproducible way of RT-SET fabrication.

AB - Building low-power and high-density circuits requires new devices, which can be based for example on single electron effects. Single electron transistors (SET), which can operate at room temperature (RT), are candidates with high potential for the post-CMOS era. However, their fabrication relies typically on a statistical fabrication of quantum dots or positioning of nanoparticles or molecules between predefined electrodes. These methods hamper a scaled-up fabrication of RT-SETs. Here, we present a route for reproducible fabrication of RT-SETs on the basis of field-emission scanning probe lithography (FE-SPL) and cryogenic reactive ion etching. Due to the unique capabilities of our FE-SPL tool, enabling pre- and post-inspection of features, highly reliable patterning and precise feature alignment are obtained. The fabricated devices exhibit single electron effects at RT. A combination of this method with nanoimprint lithography would enable a high throughput and reproducible way of RT-SET fabrication.

KW - Single electron transistor

KW - Room temperature

KW - Field-emission scanning probe lithography

KW - Cryogenic reactive ion etching

U2 - 10.1016/j.mee.2018.01.022

DO - 10.1016/j.mee.2018.01.022

M3 - Journal article

VL - 192

SP - 77

EP - 82

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -