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Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

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Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths. / Kolosov, Oleg; Dinelli, Franco; Robson, Alexander; Krier, Anthony; Hayne, Manus; Falko, Vladimir; Henini, M.

IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France : IEEE, 2015. p. 43-46.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Kolosov, O, Dinelli, F, Robson, A, Krier, A, Hayne, M, Falko, V & Henini, M 2015, Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths. in IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. IEEE, Grenoble, France, pp. 43-46, IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference , Grenoble, France, 18/05/15. https://doi.org/10.1109/IITC-MAM.2015.7325609

APA

Kolosov, O., Dinelli, F., Robson, A., Krier, A., Hayne, M., Falko, V., & Henini, M. (2015). Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths. In IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference (pp. 43-46). IEEE. https://doi.org/10.1109/IITC-MAM.2015.7325609

Vancouver

Kolosov O, Dinelli F, Robson A, Krier A, Hayne M, Falko V et al. Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths. In IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France: IEEE. 2015. p. 43-46 https://doi.org/10.1109/IITC-MAM.2015.7325609

Author

Kolosov, Oleg ; Dinelli, Franco ; Robson, Alexander ; Krier, Anthony ; Hayne, Manus ; Falko, Vladimir ; Henini, M. / Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths. IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France : IEEE, 2015. pp. 43-46

Bibtex

@inproceedings{6bf02dc00d3d488386e62bd89f6e4350,
title = "Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths",
abstract = "Multilayer structures of active semiconductor devices (1), novel memories (2) and semiconductor interconnects are becoming increasingly three-dimensional (3D) with simultaneous decrease of dimensions down to the few nanometres length scale (3). Ability to test and explore these 3D nanostructures with nanoscale resolution is vital for the optimization of their operation and improving manufacturing processes of new semiconductor devices. While electron and scanning probe microscopes (SPMs) can provide necessary lateral resolution, their ability to probe underneath the immediate surface is severely limited. Cross-sectioning of the structures via focused ion beam (FIB) to expose the subsurface areas often introduces multiple artefacts that mask the true features of the hidden structures, negating benefits of such approach. In addition, the few tens of micrometre dimension of FIB cut, make it unusable for the SPM investigation.",
keywords = "Nanotechnology, SPM, UFM ultrasonic force microscopy, 2D materials, subsurface , nanomechanics",
author = "Oleg Kolosov and Franco Dinelli and Alexander Robson and Anthony Krier and Manus Hayne and Vladimir Falko and M. Henini",
year = "2015",
doi = "10.1109/IITC-MAM.2015.7325609",
language = "English",
pages = "43--46",
booktitle = "IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference",
publisher = "IEEE",
note = "IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference ; Conference date: 18-05-2015 Through 21-05-2015",

}

RIS

TY - GEN

T1 - Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

AU - Kolosov, Oleg

AU - Dinelli, Franco

AU - Robson, Alexander

AU - Krier, Anthony

AU - Hayne, Manus

AU - Falko, Vladimir

AU - Henini, M.

PY - 2015

Y1 - 2015

N2 - Multilayer structures of active semiconductor devices (1), novel memories (2) and semiconductor interconnects are becoming increasingly three-dimensional (3D) with simultaneous decrease of dimensions down to the few nanometres length scale (3). Ability to test and explore these 3D nanostructures with nanoscale resolution is vital for the optimization of their operation and improving manufacturing processes of new semiconductor devices. While electron and scanning probe microscopes (SPMs) can provide necessary lateral resolution, their ability to probe underneath the immediate surface is severely limited. Cross-sectioning of the structures via focused ion beam (FIB) to expose the subsurface areas often introduces multiple artefacts that mask the true features of the hidden structures, negating benefits of such approach. In addition, the few tens of micrometre dimension of FIB cut, make it unusable for the SPM investigation.

AB - Multilayer structures of active semiconductor devices (1), novel memories (2) and semiconductor interconnects are becoming increasingly three-dimensional (3D) with simultaneous decrease of dimensions down to the few nanometres length scale (3). Ability to test and explore these 3D nanostructures with nanoscale resolution is vital for the optimization of their operation and improving manufacturing processes of new semiconductor devices. While electron and scanning probe microscopes (SPMs) can provide necessary lateral resolution, their ability to probe underneath the immediate surface is severely limited. Cross-sectioning of the structures via focused ion beam (FIB) to expose the subsurface areas often introduces multiple artefacts that mask the true features of the hidden structures, negating benefits of such approach. In addition, the few tens of micrometre dimension of FIB cut, make it unusable for the SPM investigation.

KW - Nanotechnology

KW - SPM

KW - UFM ultrasonic force microscopy

KW - 2D materials

KW - subsurface

KW - nanomechanics

U2 - 10.1109/IITC-MAM.2015.7325609

DO - 10.1109/IITC-MAM.2015.7325609

M3 - Conference contribution/Paper

SP - 43

EP - 46

BT - IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference

PB - IEEE

CY - Grenoble, France

T2 - IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference

Y2 - 18 May 2015 through 21 May 2015

ER -