Home > Research > Publications & Outputs > Nanothermal characterization of amorphous and c...

Research

Associated organisational units

Electronic data

  • 1.4895493

    Rights statement: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 116 (13), 2014 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4895493

    Final published version, 2.28 MB, PDF document

Links

Text available via DOI:

View graph of relations

Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy. / Bosse, Jim; Timofeeva, Maria; Tovee, Peter et al.
In: Journal of Applied Physics, Vol. 116, No. 13, 134904, 07.10.2014.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Bosse, J, Timofeeva, M, Tovee, P, Robinson, B, Huey, B & Kolosov, O 2014, 'Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy', Journal of Applied Physics, vol. 116, no. 13, 134904. https://doi.org/10.1063/1.4895493

APA

Bosse, J., Timofeeva, M., Tovee, P., Robinson, B., Huey, B., & Kolosov, O. (2014). Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy. Journal of Applied Physics, 116(13), Article 134904. https://doi.org/10.1063/1.4895493

Vancouver

Bosse J, Timofeeva M, Tovee P, Robinson B, Huey B, Kolosov O. Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy. Journal of Applied Physics. 2014 Oct 7;116(13):134904. doi: 10.1063/1.4895493

Author

Bosse, Jim ; Timofeeva, Maria ; Tovee, Peter et al. / Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy. In: Journal of Applied Physics. 2014 ; Vol. 116, No. 13.

Bibtex

@article{005321caeb3f4ce9984d09ba22169b75,
title = "Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy",
abstract = "The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.",
author = "Jim Bosse and Maria Timofeeva and Peter Tovee and Benjamin Robinson and Bryan Huey and Oleg Kolosov",
note = "Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 116 (13), 2014 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4895493",
year = "2014",
month = oct,
day = "7",
doi = "10.1063/1.4895493",
language = "English",
volume = "116",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "13",

}

RIS

TY - JOUR

T1 - Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy

AU - Bosse, Jim

AU - Timofeeva, Maria

AU - Tovee, Peter

AU - Robinson, Benjamin

AU - Huey, Bryan

AU - Kolosov, Oleg

N1 - Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 116 (13), 2014 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4895493

PY - 2014/10/7

Y1 - 2014/10/7

N2 - The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.

AB - The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.

U2 - 10.1063/1.4895493

DO - 10.1063/1.4895493

M3 - Journal article

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 13

M1 - 134904

ER -