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Neutron-induced soft errors in advanced flash memories

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  • G. Cellere
  • S. Gerardin
  • M. Bagatin
  • A. Paccagnella
  • A. Visconti
  • M. Bonanomi
  • S. Beltrami
  • P. Roche
  • G. Gasiot
  • R. Harboe Sørensen
  • A. Virtanen
  • C. Frost
  • P. Fuochi
  • C. Andreani
  • G. Gorini
  • A. Pietropaolo
  • S. Platt
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Publication date1/12/2008
Host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
PublisherIEEE
Number of pages4
ISBN (Print)9781424423781
<mark>Original language</mark>English
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 15/12/200817/12/2008

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/TerritoryUnited States
CitySan Francisco, CA
Period15/12/0817/12/08

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/TerritoryUnited States
CitySan Francisco, CA
Period15/12/0817/12/08

Abstract

Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.