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Neutron-induced soft errors in advanced flash memories. / Cellere, G.; Gerardin, S.; Bagatin, M. et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. IEEE, 2008. 4796693 (Technical Digest - International Electron Devices Meeting, IEDM).
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper
Harvard
Cellere, G, Gerardin, S, Bagatin, M, Paccagnella, A, Visconti, A, Bonanomi, M, Beltrami, S, Roche, P, Gasiot, G, Sørensen, RH, Virtanen, A, Frost, C, Fuochi, P, Andreani, C, Gorini, G, Pietropaolo, A
& Platt, S 2008,
Neutron-induced soft errors in advanced flash memories. in
2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796693, Technical Digest - International Electron Devices Meeting, IEDM, IEEE, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States,
15/12/08.
https://doi.org/10.1109/IEDM.2008.4796693APA
Cellere, G., Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Roche, P., Gasiot, G., Sørensen, R. H., Virtanen, A., Frost, C., Fuochi, P., Andreani, C., Gorini, G., Pietropaolo, A.
, & Platt, S. (2008).
Neutron-induced soft errors in advanced flash memories. In
2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796693 (Technical Digest - International Electron Devices Meeting, IEDM). IEEE.
https://doi.org/10.1109/IEDM.2008.4796693Vancouver
Cellere G, Gerardin S, Bagatin M, Paccagnella A, Visconti A, Bonanomi M et al.
Neutron-induced soft errors in advanced flash memories. In 2008 IEEE International Electron Devices Meeting, IEDM 2008. IEEE. 2008. 4796693. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2008.4796693
Author
Bibtex
@inproceedings{7dfe8b2bb5e24b169fd300bcea182328,
title = "Neutron-induced soft errors in advanced flash memories",
abstract = "Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.",
author = "G. Cellere and S. Gerardin and M. Bagatin and A. Paccagnella and A. Visconti and M. Bonanomi and S. Beltrami and P. Roche and G. Gasiot and S{\o}rensen, {R. Harboe} and A. Virtanen and C. Frost and P. Fuochi and C. Andreani and G. Gorini and A. Pietropaolo and S. Platt",
year = "2008",
month = dec,
day = "1",
doi = "10.1109/IEDM.2008.4796693",
language = "English",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "IEEE",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",
}
RIS
TY - GEN
T1 - Neutron-induced soft errors in advanced flash memories
AU - Cellere, G.
AU - Gerardin, S.
AU - Bagatin, M.
AU - Paccagnella, A.
AU - Visconti, A.
AU - Bonanomi, M.
AU - Beltrami, S.
AU - Roche, P.
AU - Gasiot, G.
AU - Sørensen, R. Harboe
AU - Virtanen, A.
AU - Frost, C.
AU - Fuochi, P.
AU - Andreani, C.
AU - Gorini, G.
AU - Pietropaolo, A.
AU - Platt, S.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.
AB - Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.
U2 - 10.1109/IEDM.2008.4796693
DO - 10.1109/IEDM.2008.4796693
M3 - Conference contribution/Paper
AN - SCOPUS:64549090985
SN - 9781424423781
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008
PB - IEEE
T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008
Y2 - 15 December 2008 through 17 December 2008
ER -
