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Neutron-induced soft errors in advanced flash memories

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Neutron-induced soft errors in advanced flash memories. / Cellere, G.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Visconti, A.; Bonanomi, M.; Beltrami, S.; Roche, P.; Gasiot, G.; Sørensen, R. Harboe; Virtanen, A.; Frost, C.; Fuochi, P.; Andreani, C.; Gorini, G.; Pietropaolo, A.; Platt, S.

2008 IEEE International Electron Devices Meeting, IEDM 2008. IEEE, 2008. 4796693 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

Harvard

Cellere, G, Gerardin, S, Bagatin, M, Paccagnella, A, Visconti, A, Bonanomi, M, Beltrami, S, Roche, P, Gasiot, G, Sørensen, RH, Virtanen, A, Frost, C, Fuochi, P, Andreani, C, Gorini, G, Pietropaolo, A & Platt, S 2008, Neutron-induced soft errors in advanced flash memories. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796693, Technical Digest - International Electron Devices Meeting, IEDM, IEEE, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 15/12/08. https://doi.org/10.1109/IEDM.2008.4796693

APA

Cellere, G., Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Roche, P., Gasiot, G., Sørensen, R. H., Virtanen, A., Frost, C., Fuochi, P., Andreani, C., Gorini, G., Pietropaolo, A., & Platt, S. (2008). Neutron-induced soft errors in advanced flash memories. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796693] (Technical Digest - International Electron Devices Meeting, IEDM). IEEE. https://doi.org/10.1109/IEDM.2008.4796693

Vancouver

Cellere G, Gerardin S, Bagatin M, Paccagnella A, Visconti A, Bonanomi M et al. Neutron-induced soft errors in advanced flash memories. In 2008 IEEE International Electron Devices Meeting, IEDM 2008. IEEE. 2008. 4796693. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796693

Author

Cellere, G. ; Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Beltrami, S. ; Roche, P. ; Gasiot, G. ; Sørensen, R. Harboe ; Virtanen, A. ; Frost, C. ; Fuochi, P. ; Andreani, C. ; Gorini, G. ; Pietropaolo, A. ; Platt, S. / Neutron-induced soft errors in advanced flash memories. 2008 IEEE International Electron Devices Meeting, IEDM 2008. IEEE, 2008. (Technical Digest - International Electron Devices Meeting, IEDM).

Bibtex

@inproceedings{7dfe8b2bb5e24b169fd300bcea182328,
title = "Neutron-induced soft errors in advanced flash memories",
abstract = "Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.",
author = "G. Cellere and S. Gerardin and M. Bagatin and A. Paccagnella and A. Visconti and M. Bonanomi and S. Beltrami and P. Roche and G. Gasiot and S{\o}rensen, {R. Harboe} and A. Virtanen and C. Frost and P. Fuochi and C. Andreani and G. Gorini and A. Pietropaolo and S. Platt",
year = "2008",
month = dec,
day = "1",
doi = "10.1109/IEDM.2008.4796693",
language = "English",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "IEEE",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

RIS

TY - GEN

T1 - Neutron-induced soft errors in advanced flash memories

AU - Cellere, G.

AU - Gerardin, S.

AU - Bagatin, M.

AU - Paccagnella, A.

AU - Visconti, A.

AU - Bonanomi, M.

AU - Beltrami, S.

AU - Roche, P.

AU - Gasiot, G.

AU - Sørensen, R. Harboe

AU - Virtanen, A.

AU - Frost, C.

AU - Fuochi, P.

AU - Andreani, C.

AU - Gorini, G.

AU - Pietropaolo, A.

AU - Platt, S.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

AB - Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

U2 - 10.1109/IEDM.2008.4796693

DO - 10.1109/IEDM.2008.4796693

M3 - Conference contribution/Paper

AN - SCOPUS:64549090985

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

PB - IEEE

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -