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Nonlinear properties of mesoscopic junctions under high-frequency field irradiation

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
<mark>Journal publication date</mark>15/04/1989
<mark>Journal</mark>EPL
Issue number8
Volume8
Number of pages5
Pages (from-to)785-789
Publication StatusPublished
<mark>Original language</mark>English

Abstract

The photogalvanic effect and even-harmonics generation in a mesoscopic junction are calculated in diffusion approximation. The characteristic values of the corresponding components of current are 10-9 Å under the irradiation of a field with Eω ~ 1 V/cm, ω ~ 1 GHz. An a.c.-field effect on the conductance of a mesoscopic junction is also investigated, and it was shown that in a wide range of field parameters it could differ from that which the weak localization predicts.