Final published version, 121 KB, PDF document
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Nonparabolic band effects in GaAs/AlxGa1-xAs quantum dots and ultrathin quantum wells
AU - Schildermans, Nele
AU - Hayne, M
AU - Moshchalkov, Victor V.
AU - Rastelli, Armando
AU - Schmidt, Oliver G.
PY - 2005/9/14
Y1 - 2005/9/14
N2 - We have investigated the optical properties of unstrained GaAs/AlxGa1-xAs quantum dot/well systems with the aim of studying the influence of confinement on the effective exciton mass, as determined from the photoluminescence line shift in high magnetic fields (<= 50 T). The effective exciton mass is found to be more than twice the value for bulk GaAs. We attribute this to an enhanced nonparabolicity in the GaAs conduction band at the nanoscale.
AB - We have investigated the optical properties of unstrained GaAs/AlxGa1-xAs quantum dot/well systems with the aim of studying the influence of confinement on the effective exciton mass, as determined from the photoluminescence line shift in high magnetic fields (<= 50 T). The effective exciton mass is found to be more than twice the value for bulk GaAs. We attribute this to an enhanced nonparabolicity in the GaAs conduction band at the nanoscale.
KW - INPLANE EFFECTIVE-MASS
KW - ELECTRONIC-STRUCTURE
KW - MAGNETIC-FIELDS
KW - ENHANCEMENT
KW - HOLE
KW - EXCITONS
KW - WIRES
U2 - 10.1103/PhysRevB.72.115312
DO - 10.1103/PhysRevB.72.115312
M3 - Journal article
VL - 72
JO - Physical review B
JF - Physical review B
SN - 1550-235X
IS - 11
M1 - 115312
ER -