Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 15/02/2011 |
|---|---|
| <mark>Journal</mark> | Advanced Materials |
| Issue number | 7 |
| Volume | 23 |
| Number of pages | 5 |
| Pages (from-to) | 878-882 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.