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On-chip quantum confinement refrigeration overcoming electron-phonon heat leaks

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On-chip quantum confinement refrigeration overcoming electron-phonon heat leaks. / Autti, S.; Prance, J. R.; Prunnila, M.
In: Physical Review B, Vol. 111, No. 16, L161404, 15.04.2025.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Autti S, Prance JR, Prunnila M. On-chip quantum confinement refrigeration overcoming electron-phonon heat leaks. Physical Review B. 2025 Apr 15;111(16):L161404. Epub 2025 Apr 14. doi: 10.1103/physrevb.111.l161404

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@article{b678a747868e4754a0ed31f9f00aaa03,
title = "On-chip quantum confinement refrigeration overcoming electron-phonon heat leaks",
abstract = "Circuit-based quantum devices rely on keeping electrons at millikelvin temperatures. Improved coherence and sensitivity as well as discovering new physical phenomena motivate pursuing ever lower electron temperatures, accessible using on-chip cooling techniques. Here we show that a two-dimensional electron gas (2DEG), with the sub-band populations manipulated using gate voltages, works as an on-chip cooler only limited by a fundamental phonon heat leak. The 2DEG can, for example, be realized in a silicon-based double-gate complementary metal oxide semiconductor (CMOS) transistor. A single-shot 2DEG cooler can reduce the electron temperature by a factor of 2 with a hold time up to a second, achieved by expanding the electron gas into an additional sub-band. Integrating an array of such coolers—using, e.g., CMOS fabrication techniques—to obtain continuous cooldown may allow reaching down to microkelvin device temperatures. ",
author = "S. Autti and Prance, {J. R.} and M. Prunnila",
year = "2025",
month = apr,
day = "15",
doi = "10.1103/physrevb.111.l161404",
language = "English",
volume = "111",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society (APS)",
number = "16",

}

RIS

TY - JOUR

T1 - On-chip quantum confinement refrigeration overcoming electron-phonon heat leaks

AU - Autti, S.

AU - Prance, J. R.

AU - Prunnila, M.

PY - 2025/4/15

Y1 - 2025/4/15

N2 - Circuit-based quantum devices rely on keeping electrons at millikelvin temperatures. Improved coherence and sensitivity as well as discovering new physical phenomena motivate pursuing ever lower electron temperatures, accessible using on-chip cooling techniques. Here we show that a two-dimensional electron gas (2DEG), with the sub-band populations manipulated using gate voltages, works as an on-chip cooler only limited by a fundamental phonon heat leak. The 2DEG can, for example, be realized in a silicon-based double-gate complementary metal oxide semiconductor (CMOS) transistor. A single-shot 2DEG cooler can reduce the electron temperature by a factor of 2 with a hold time up to a second, achieved by expanding the electron gas into an additional sub-band. Integrating an array of such coolers—using, e.g., CMOS fabrication techniques—to obtain continuous cooldown may allow reaching down to microkelvin device temperatures.

AB - Circuit-based quantum devices rely on keeping electrons at millikelvin temperatures. Improved coherence and sensitivity as well as discovering new physical phenomena motivate pursuing ever lower electron temperatures, accessible using on-chip cooling techniques. Here we show that a two-dimensional electron gas (2DEG), with the sub-band populations manipulated using gate voltages, works as an on-chip cooler only limited by a fundamental phonon heat leak. The 2DEG can, for example, be realized in a silicon-based double-gate complementary metal oxide semiconductor (CMOS) transistor. A single-shot 2DEG cooler can reduce the electron temperature by a factor of 2 with a hold time up to a second, achieved by expanding the electron gas into an additional sub-band. Integrating an array of such coolers—using, e.g., CMOS fabrication techniques—to obtain continuous cooldown may allow reaching down to microkelvin device temperatures.

U2 - 10.1103/physrevb.111.l161404

DO - 10.1103/physrevb.111.l161404

M3 - Journal article

VL - 111

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 16

M1 - L161404

ER -