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Optical waveguides in Sn2P2S6 by low fluence MeV He+ ion implantation

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>2006
<mark>Journal</mark>Optics Express
Issue number6
Number of pages15
Pages (from-to)2344-2358
Publication StatusPublished
<mark>Original language</mark>English


Planar waveguides in nonlinear optical crystals of Sn2P 2S6 have been produced by He+ ion implantation. The effective indices of the waveguide have been determined and refractive index profiles have been evaluated for the indices along all three principal axes of the optical indicatrix. The depth of the induced optical barrier is Δn1 = -0.07, Δn2 = -0.07 and Δn 3 = -0.09 at λ= 0.633μm for a fluence Φ = 0.5 × 1015ions/cm2. Propagation losses for hybrid-n1 modes are α ≃ 10dB/cm.