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Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

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Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics. / Zhuang, Qiandong; Alradhi, Hayfaa; Jin, Zhiming et al.
In: Nanotechnology, Vol. 28, No. 10, 105710, 10.03.2017.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhuang, Q, Alradhi, H, Jin, Z, Chen, XR, Shao, J, Chen, X, Sanchez, AM, Cao, YC, Liu, JY, Yates, P, Durose, K & Jin, CJ 2017, 'Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics', Nanotechnology, vol. 28, no. 10, 105710. https://doi.org/10.1088/1361-6528/aa59c5

APA

Zhuang, Q., Alradhi, H., Jin, Z., Chen, X. R., Shao, J., Chen, X., Sanchez, A. M., Cao, Y. C., Liu, J. Y., Yates, P., Durose, K., & Jin, C. J. (2017). Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics. Nanotechnology, 28(10), Article 105710. https://doi.org/10.1088/1361-6528/aa59c5

Vancouver

Zhuang Q, Alradhi H, Jin Z, Chen XR, Shao J, Chen X et al. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics. Nanotechnology. 2017 Mar 10;28(10):105710. Epub 2017 Feb 8. doi: 10.1088/1361-6528/aa59c5

Author

Zhuang, Qiandong ; Alradhi, Hayfaa ; Jin, Zhiming et al. / Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics. In: Nanotechnology. 2017 ; Vol. 28, No. 10.

Bibtex

@article{3b9490af128a43c1bfc28c74f3b61824,
title = "Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics",
abstract = "InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.",
author = "Qiandong Zhuang and Hayfaa Alradhi and Zhiming Jin and Chen, {X. R.} and J. Shao and X. Chen and Sanchez, {Ana M.} and Cao, {Y. C.} and Liu, {J. Y.} and P. Yates and K. Durose and Jin, {C. J.}",
year = "2017",
month = mar,
day = "10",
doi = "10.1088/1361-6528/aa59c5",
language = "English",
volume = "28",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "10",

}

RIS

TY - JOUR

T1 - Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

AU - Zhuang, Qiandong

AU - Alradhi, Hayfaa

AU - Jin, Zhiming

AU - Chen, X. R.

AU - Shao, J.

AU - Chen, X.

AU - Sanchez, Ana M.

AU - Cao, Y. C.

AU - Liu, J. Y.

AU - Yates, P.

AU - Durose, K.

AU - Jin, C. J.

PY - 2017/3/10

Y1 - 2017/3/10

N2 - InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

AB - InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

U2 - 10.1088/1361-6528/aa59c5

DO - 10.1088/1361-6528/aa59c5

M3 - Journal article

VL - 28

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 10

M1 - 105710

ER -