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  • Hayne PRB 50 17208 1994

    Rights statement: © 1994 The American Physical Society

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Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions

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Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions. / Hayne, Manus; USHER, A ; PLAUT, A S et al.
In: Physical review B, Vol. 50, No. 23, 15.12.1994, p. 17208-17216.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hayne, M, USHER, A, PLAUT, AS & PLOOG, K 1994, 'Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions', Physical review B, vol. 50, no. 23, pp. 17208-17216. https://doi.org/10.1103/PhysRevB.50.17208

APA

Hayne, M., USHER, A., PLAUT, A. S., & PLOOG, K. (1994). Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions. Physical review B, 50(23), 17208-17216. https://doi.org/10.1103/PhysRevB.50.17208

Vancouver

Hayne M, USHER A, PLAUT AS, PLOOG K. Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions. Physical review B. 1994 Dec 15;50(23):17208-17216. doi: 10.1103/PhysRevB.50.17208

Author

Hayne, Manus ; USHER, A ; PLAUT, A S et al. / Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions. In: Physical review B. 1994 ; Vol. 50, No. 23. pp. 17208-17216.

Bibtex

@article{e26682463424498aa7a75a5666768000,
title = "Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions",
abstract = "We report measurements of optically induced density depletion of the two-dimensional electron system formed at the interface of a GaAs/AlxGa1-xAs heterojunction with a δ-doped layer of Be acceptors in the GaAs 250 {\AA} from the interface. Our measurements show that at low laser power the depletion effect is controlled by the recombination of two-dimensional electrons with photoexcited holes that have become bound to the Be acceptors. The point at which all the Be acceptors in the sample have been neutralized by photoexcited holes is indicated by the sudden appearance of free holes in the GaAs, which then control the density depletion in the high-power regime. We present a comprehensive dynamic model of the depletion effect that includes both regimes, and calculate the densities and mobilities of the carriers involved in the process.",
author = "Manus Hayne and A USHER and PLAUT, {A S} and K PLOOG",
note = "{\textcopyright} 1994 The American Physical Society",
year = "1994",
month = dec,
day = "15",
doi = "10.1103/PhysRevB.50.17208",
language = "English",
volume = "50",
pages = "17208--17216",
journal = "Physical review B",
issn = "0163-1829",
publisher = "AMER PHYSICAL SOC",
number = "23",

}

RIS

TY - JOUR

T1 - Optically induced density depletion of the two-dimensional electron system in GaAs/AlxGa1-xAs heterojunctions

AU - Hayne, Manus

AU - USHER, A

AU - PLAUT, A S

AU - PLOOG, K

N1 - © 1994 The American Physical Society

PY - 1994/12/15

Y1 - 1994/12/15

N2 - We report measurements of optically induced density depletion of the two-dimensional electron system formed at the interface of a GaAs/AlxGa1-xAs heterojunction with a δ-doped layer of Be acceptors in the GaAs 250 Å from the interface. Our measurements show that at low laser power the depletion effect is controlled by the recombination of two-dimensional electrons with photoexcited holes that have become bound to the Be acceptors. The point at which all the Be acceptors in the sample have been neutralized by photoexcited holes is indicated by the sudden appearance of free holes in the GaAs, which then control the density depletion in the high-power regime. We present a comprehensive dynamic model of the depletion effect that includes both regimes, and calculate the densities and mobilities of the carriers involved in the process.

AB - We report measurements of optically induced density depletion of the two-dimensional electron system formed at the interface of a GaAs/AlxGa1-xAs heterojunction with a δ-doped layer of Be acceptors in the GaAs 250 Å from the interface. Our measurements show that at low laser power the depletion effect is controlled by the recombination of two-dimensional electrons with photoexcited holes that have become bound to the Be acceptors. The point at which all the Be acceptors in the sample have been neutralized by photoexcited holes is indicated by the sudden appearance of free holes in the GaAs, which then control the density depletion in the high-power regime. We present a comprehensive dynamic model of the depletion effect that includes both regimes, and calculate the densities and mobilities of the carriers involved in the process.

U2 - 10.1103/PhysRevB.50.17208

DO - 10.1103/PhysRevB.50.17208

M3 - Journal article

VL - 50

SP - 17208

EP - 17216

JO - Physical review B

JF - Physical review B

SN - 0163-1829

IS - 23

ER -