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Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors

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Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors. / Anyebe, Ezekiel; Sandall, Ian; Jin, Zhiming et al.

In: Scientific Reports, Vol. 7, 10.04.2017, p. 46110-46118.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Anyebe, E, Sandall, I, Jin, Z, Sanchez, AM, Rajpalke, MK, Veal, T, Cao, YC, Li, H, Harvey, RJ & Zhuang, Q 2017, 'Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors', Scientific Reports, vol. 7, pp. 46110-46118. https://doi.org/10.1038/srep46110

APA

Anyebe, E., Sandall, I., Jin, Z., Sanchez, A. M., Rajpalke, M. K., Veal, T., Cao, Y. C., Li, H., Harvey, R. J., & Zhuang, Q. (2017). Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors. Scientific Reports, 7, 46110-46118. https://doi.org/10.1038/srep46110

Vancouver

Anyebe E, Sandall I, Jin Z, Sanchez AM, Rajpalke MK, Veal T et al. Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors. Scientific Reports. 2017 Apr 10;7:46110-46118. doi: 10.1038/srep46110

Author

Anyebe, Ezekiel ; Sandall, Ian ; Jin, Zhiming et al. / Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors. In: Scientific Reports. 2017 ; Vol. 7. pp. 46110-46118.

Bibtex

@article{97e65dfe5b6e4f118ba420cbb82b95c7,
title = "Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors",
abstract = "The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420–450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.",
keywords = "Nanowires, infrared photodetectors , Graphite, Molecular beam epitaxy",
author = "Ezekiel Anyebe and Ian Sandall and Zhiming Jin and Sanchez, {Ana M.} and Rajpalke, {Mohana K.} and Timothy Veal and Cao, {Y. C.} and HanDong Li and Harvey, {Russell James} and Qiandong Zhuang",
year = "2017",
month = apr,
day = "10",
doi = "10.1038/srep46110",
language = "English",
volume = "7",
pages = "46110--46118",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors

AU - Anyebe, Ezekiel

AU - Sandall, Ian

AU - Jin, Zhiming

AU - Sanchez, Ana M.

AU - Rajpalke, Mohana K.

AU - Veal, Timothy

AU - Cao, Y. C.

AU - Li, HanDong

AU - Harvey, Russell James

AU - Zhuang, Qiandong

PY - 2017/4/10

Y1 - 2017/4/10

N2 - The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420–450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

AB - The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420–450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

KW - Nanowires

KW - infrared photodetectors

KW - Graphite

KW - Molecular beam epitaxy

U2 - 10.1038/srep46110

DO - 10.1038/srep46110

M3 - Journal article

VL - 7

SP - 46110

EP - 46118

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

ER -