The Modular Multilevel Converter (MMC) has emerged as a promising solution for medium and high-voltage power conversion applications. This paper proposes a modified configuration of the MMC model based on a conventional half-bridge submodule (HBSM) utilizing a Si IGBT and SiC MOSFET hybrid approach. The combination of Si IGBTs and SiC MOSFETs offers a great advantage of employing the low cost and high voltage capability of Si IGBTs along with the faster switching speeds and low power loss of SiC MOSFETs. A hybrid HBSM places the Si IGBTs on the upper side and SiC MOSFETs on the lower side in order to reduce the switching and conduction power losses. This arrangement of the hybrid system for MMC cells enables improvements in the converter’s performance and efficiency. A nine-level voltage of MMC (9LMMC) model based on IGBT/SiC hybrid HBSMs is simulated using the PLECS® Standalone tool to verify the effectiveness of the modified converter topology.