Accepted author manuscript, 1.2 MB, PDF document
Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review
Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review
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TY - CONF
T1 - Optimized Modular Multilevel Converter Topology using Si/SiC Hybrid Half-bridge Submodule
AU - Athwer, A.
AU - Darwish, Ahmed
AU - Ma, Xiandong
N1 - Conference code: PEMD (17317)
PY - 2024/4/26
Y1 - 2024/4/26
N2 - The Modular Multilevel Converter (MMC) has emerged as a promising solution for medium and high-voltage power conversion applications. This paper proposes a modified configuration of the MMC model based on a conventional half-bridge submodule (HBSM) utilizing a Si IGBT and SiC MOSFET hybrid approach. The combination of Si IGBTs and SiC MOSFETs offers a great advantage of employing the low cost and high voltage capability of Si IGBTs along with the faster switching speeds and low power loss of SiC MOSFETs. A hybrid HBSM places the Si IGBTs on the upper side and SiC MOSFETs on the lower side in order to reduce the switching and conduction power losses. This arrangement of the hybrid system for MMC cells enables improvements in the converter’s performance and efficiency. A nine-level voltage of MMC (9LMMC) model based on IGBT/SiC hybrid HBSMs is simulated using the PLECS® Standalone tool to verify the effectiveness of the modified converter topology.
AB - The Modular Multilevel Converter (MMC) has emerged as a promising solution for medium and high-voltage power conversion applications. This paper proposes a modified configuration of the MMC model based on a conventional half-bridge submodule (HBSM) utilizing a Si IGBT and SiC MOSFET hybrid approach. The combination of Si IGBTs and SiC MOSFETs offers a great advantage of employing the low cost and high voltage capability of Si IGBTs along with the faster switching speeds and low power loss of SiC MOSFETs. A hybrid HBSM places the Si IGBTs on the upper side and SiC MOSFETs on the lower side in order to reduce the switching and conduction power losses. This arrangement of the hybrid system for MMC cells enables improvements in the converter’s performance and efficiency. A nine-level voltage of MMC (9LMMC) model based on IGBT/SiC hybrid HBSMs is simulated using the PLECS® Standalone tool to verify the effectiveness of the modified converter topology.
M3 - Conference paper
SP - 1
EP - 7
T2 - 2024 13th International confernce on Power Electronics Machines and Drives (PEMD)
Y2 - 10 June 2024 through 13 June 2024
ER -