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Optimized Modular Multilevel Converter Topology using Si/SiC Hybrid Half-bridge Submodule

Research output: Contribution to conference - Without ISBN/ISSN Conference paperpeer-review

Forthcoming

Standard

Optimized Modular Multilevel Converter Topology using Si/SiC Hybrid Half-bridge Submodule. / Athwer, A.; Darwish, Ahmed; Ma, Xiandong.
2024. 1-7 Paper presented at 2024 13th International confernce on Power Electronics Machines and Drives (PEMD), Nottingham, United Kingdom.

Research output: Contribution to conference - Without ISBN/ISSN Conference paperpeer-review

Harvard

Athwer, A, Darwish, A & Ma, X 2024, 'Optimized Modular Multilevel Converter Topology using Si/SiC Hybrid Half-bridge Submodule', Paper presented at 2024 13th International confernce on Power Electronics Machines and Drives (PEMD), Nottingham, United Kingdom, 10/06/24 - 13/06/24 pp. 1-7.

APA

Athwer, A., Darwish, A., & Ma, X. (in press). Optimized Modular Multilevel Converter Topology using Si/SiC Hybrid Half-bridge Submodule. 1-7. Paper presented at 2024 13th International confernce on Power Electronics Machines and Drives (PEMD), Nottingham, United Kingdom.

Vancouver

Athwer A, Darwish A, Ma X. Optimized Modular Multilevel Converter Topology using Si/SiC Hybrid Half-bridge Submodule. 2024. Paper presented at 2024 13th International confernce on Power Electronics Machines and Drives (PEMD), Nottingham, United Kingdom.

Author

Athwer, A. ; Darwish, Ahmed ; Ma, Xiandong. / Optimized Modular Multilevel Converter Topology using Si/SiC Hybrid Half-bridge Submodule. Paper presented at 2024 13th International confernce on Power Electronics Machines and Drives (PEMD), Nottingham, United Kingdom.7 p.

Bibtex

@conference{e9196475324c4e04889d8a86536109d3,
title = "Optimized Modular Multilevel Converter Topology using Si/SiC Hybrid Half-bridge Submodule",
abstract = "The Modular Multilevel Converter (MMC) has emerged as a promising solution for medium and high-voltage power conversion applications. This paper proposes a modified configuration of the MMC model based on a conventional half-bridge submodule (HBSM) utilizing a Si IGBT and SiC MOSFET hybrid approach. The combination of Si IGBTs and SiC MOSFETs offers a great advantage of employing the low cost and high voltage capability of Si IGBTs along with the faster switching speeds and low power loss of SiC MOSFETs. A hybrid HBSM places the Si IGBTs on the upper side and SiC MOSFETs on the lower side in order to reduce the switching and conduction power losses. This arrangement of the hybrid system for MMC cells enables improvements in the converter{\textquoteright}s performance and efficiency. A nine-level voltage of MMC (9LMMC) model based on IGBT/SiC hybrid HBSMs is simulated using the PLECS{\textregistered} Standalone tool to verify the effectiveness of the modified converter topology.",
author = "A. Athwer and Ahmed Darwish and Xiandong Ma",
year = "2024",
month = apr,
day = "26",
language = "English",
pages = "1--7",
note = "2024 13th International confernce on Power Electronics Machines and Drives (PEMD), IET PEMD Conference 2024 ; Conference date: 10-06-2024 Through 13-06-2024",
url = "https://conferences.ieee.org/conferences_events/conferences/conferencedetails/61218",

}

RIS

TY - CONF

T1 - Optimized Modular Multilevel Converter Topology using Si/SiC Hybrid Half-bridge Submodule

AU - Athwer, A.

AU - Darwish, Ahmed

AU - Ma, Xiandong

N1 - Conference code: PEMD (17317)

PY - 2024/4/26

Y1 - 2024/4/26

N2 - The Modular Multilevel Converter (MMC) has emerged as a promising solution for medium and high-voltage power conversion applications. This paper proposes a modified configuration of the MMC model based on a conventional half-bridge submodule (HBSM) utilizing a Si IGBT and SiC MOSFET hybrid approach. The combination of Si IGBTs and SiC MOSFETs offers a great advantage of employing the low cost and high voltage capability of Si IGBTs along with the faster switching speeds and low power loss of SiC MOSFETs. A hybrid HBSM places the Si IGBTs on the upper side and SiC MOSFETs on the lower side in order to reduce the switching and conduction power losses. This arrangement of the hybrid system for MMC cells enables improvements in the converter’s performance and efficiency. A nine-level voltage of MMC (9LMMC) model based on IGBT/SiC hybrid HBSMs is simulated using the PLECS® Standalone tool to verify the effectiveness of the modified converter topology.

AB - The Modular Multilevel Converter (MMC) has emerged as a promising solution for medium and high-voltage power conversion applications. This paper proposes a modified configuration of the MMC model based on a conventional half-bridge submodule (HBSM) utilizing a Si IGBT and SiC MOSFET hybrid approach. The combination of Si IGBTs and SiC MOSFETs offers a great advantage of employing the low cost and high voltage capability of Si IGBTs along with the faster switching speeds and low power loss of SiC MOSFETs. A hybrid HBSM places the Si IGBTs on the upper side and SiC MOSFETs on the lower side in order to reduce the switching and conduction power losses. This arrangement of the hybrid system for MMC cells enables improvements in the converter’s performance and efficiency. A nine-level voltage of MMC (9LMMC) model based on IGBT/SiC hybrid HBSMs is simulated using the PLECS® Standalone tool to verify the effectiveness of the modified converter topology.

M3 - Conference paper

SP - 1

EP - 7

T2 - 2024 13th International confernce on Power Electronics Machines and Drives (PEMD)

Y2 - 10 June 2024 through 13 June 2024

ER -