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Optimizing Converter Layer and Active Volume Thickness for Gallium Nitride Neutron Detectors

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Optimizing Converter Layer and Active Volume Thickness for Gallium Nitride Neutron Detectors. / Zhang, Zhongming; Aspinall, Michael.
2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC). Boston, MA, USA: IEEE, 2021.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper

Harvard

Zhang, Z & Aspinall, M 2021, Optimizing Converter Layer and Active Volume Thickness for Gallium Nitride Neutron Detectors. in 2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC). IEEE, Boston, MA, USA. https://doi.org/10.1109/NSS/MIC42677.2020.9507948

APA

Zhang, Z., & Aspinall, M. (2021). Optimizing Converter Layer and Active Volume Thickness for Gallium Nitride Neutron Detectors. In 2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) IEEE. https://doi.org/10.1109/NSS/MIC42677.2020.9507948

Vancouver

Zhang Z, Aspinall M. Optimizing Converter Layer and Active Volume Thickness for Gallium Nitride Neutron Detectors. In 2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC). Boston, MA, USA: IEEE. 2021 Epub 2020 Oct 31. doi: 10.1109/NSS/MIC42677.2020.9507948

Author

Zhang, Zhongming ; Aspinall, Michael. / Optimizing Converter Layer and Active Volume Thickness for Gallium Nitride Neutron Detectors. 2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC). Boston, MA, USA : IEEE, 2021.

Bibtex

@inproceedings{31d0adb52d7249c78c68b7e9e64b6086,
title = "Optimizing Converter Layer and Active Volume Thickness for Gallium Nitride Neutron Detectors",
abstract = "Gallium nitride (GaN) is a direct energy gap semiconductor material with a wide bandgap, high thermal conductivity, high chemical stability, and strong resistance to radiation. It has broad prospects in the application of optoelectronics, high temperature and high power devices, and particle detectors. In this work, an early-stage GaN radiation-hardened neutron detector is described. Monte Carlo simulations using Geant4 10.6 are used to investigate and optimize the converter layers and active volume for the detector and the suggested thickness needed to achieve the highest detection efficiency is given. Further, the gamma rejection ability for GaN has been studied, and the spatial distribution of the partial reaction type of gamma rays with GaN are shown for the first time. This work will aid the design and fabrication of radiation-resistant GaN neutron detectors and will benefit reactor monitoring, high-energy physics experiments, and nuclear fusion research.",
author = "Zhongming Zhang and Michael Aspinall",
year = "2021",
month = aug,
day = "12",
doi = "10.1109/NSS/MIC42677.2020.9507948",
language = "English",
isbn = "9781728176949",
booktitle = "2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)",
publisher = "IEEE",

}

RIS

TY - GEN

T1 - Optimizing Converter Layer and Active Volume Thickness for Gallium Nitride Neutron Detectors

AU - Zhang, Zhongming

AU - Aspinall, Michael

PY - 2021/8/12

Y1 - 2021/8/12

N2 - Gallium nitride (GaN) is a direct energy gap semiconductor material with a wide bandgap, high thermal conductivity, high chemical stability, and strong resistance to radiation. It has broad prospects in the application of optoelectronics, high temperature and high power devices, and particle detectors. In this work, an early-stage GaN radiation-hardened neutron detector is described. Monte Carlo simulations using Geant4 10.6 are used to investigate and optimize the converter layers and active volume for the detector and the suggested thickness needed to achieve the highest detection efficiency is given. Further, the gamma rejection ability for GaN has been studied, and the spatial distribution of the partial reaction type of gamma rays with GaN are shown for the first time. This work will aid the design and fabrication of radiation-resistant GaN neutron detectors and will benefit reactor monitoring, high-energy physics experiments, and nuclear fusion research.

AB - Gallium nitride (GaN) is a direct energy gap semiconductor material with a wide bandgap, high thermal conductivity, high chemical stability, and strong resistance to radiation. It has broad prospects in the application of optoelectronics, high temperature and high power devices, and particle detectors. In this work, an early-stage GaN radiation-hardened neutron detector is described. Monte Carlo simulations using Geant4 10.6 are used to investigate and optimize the converter layers and active volume for the detector and the suggested thickness needed to achieve the highest detection efficiency is given. Further, the gamma rejection ability for GaN has been studied, and the spatial distribution of the partial reaction type of gamma rays with GaN are shown for the first time. This work will aid the design and fabrication of radiation-resistant GaN neutron detectors and will benefit reactor monitoring, high-energy physics experiments, and nuclear fusion research.

U2 - 10.1109/NSS/MIC42677.2020.9507948

DO - 10.1109/NSS/MIC42677.2020.9507948

M3 - Conference contribution/Paper

SN - 9781728176949

BT - 2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

PB - IEEE

CY - Boston, MA, USA

ER -