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Parity effect in Al and Nb single electron transistors in a tunable environment

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Parity effect in Al and Nb single electron transistors in a tunable environment. / Savin, A. M.; Meschke, M.; Pekola, Jukka P. et al.
In: Applied Physics Letters, Vol. 91, No. 6, 063512, 08.2007.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Savin, AM, Meschke, M, Pekola, JP, Pashkin, Y, Li, TF, Im, H & Tsai, J-S 2007, 'Parity effect in Al and Nb single electron transistors in a tunable environment', Applied Physics Letters, vol. 91, no. 6, 063512. https://doi.org/10.1063/1.2768897

APA

Savin, A. M., Meschke, M., Pekola, J. P., Pashkin, Y., Li, T. F., Im, H., & Tsai, J.-S. (2007). Parity effect in Al and Nb single electron transistors in a tunable environment. Applied Physics Letters, 91(6), Article 063512. https://doi.org/10.1063/1.2768897

Vancouver

Savin AM, Meschke M, Pekola JP, Pashkin Y, Li TF, Im H et al. Parity effect in Al and Nb single electron transistors in a tunable environment. Applied Physics Letters. 2007 Aug;91(6):063512. Epub 2007 Aug 9. doi: 10.1063/1.2768897

Author

Savin, A. M. ; Meschke, M. ; Pekola, Jukka P. et al. / Parity effect in Al and Nb single electron transistors in a tunable environment. In: Applied Physics Letters. 2007 ; Vol. 91, No. 6.

Bibtex

@article{1b154382e05840f9ae3db698870d5294,
title = "Parity effect in Al and Nb single electron transistors in a tunable environment",
abstract = "Two different types of Cooper pair transistors, with Al and Nb islands, have been investigated in atunable electromagnetic environment. The device with an Al island demonstrates gate chargemodulation with 2e periodicity in a wide range of environmental impedances at bath temperaturesbelow 340 mK. Contrary to the results of the Al sample, the authors were not able to detect 2eperiodicity under any conditions on similar samples with Nb island. The authors attribute this to thematerial properties of Nb.",
author = "Savin, {A. M.} and M. Meschke and Pekola, {Jukka P.} and Yuri Pashkin and Li, {T. F.} and Hyunsik Im and Jaw-Shen Tsai",
year = "2007",
month = aug,
doi = "10.1063/1.2768897",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - Parity effect in Al and Nb single electron transistors in a tunable environment

AU - Savin, A. M.

AU - Meschke, M.

AU - Pekola, Jukka P.

AU - Pashkin, Yuri

AU - Li, T. F.

AU - Im, Hyunsik

AU - Tsai, Jaw-Shen

PY - 2007/8

Y1 - 2007/8

N2 - Two different types of Cooper pair transistors, with Al and Nb islands, have been investigated in atunable electromagnetic environment. The device with an Al island demonstrates gate chargemodulation with 2e periodicity in a wide range of environmental impedances at bath temperaturesbelow 340 mK. Contrary to the results of the Al sample, the authors were not able to detect 2eperiodicity under any conditions on similar samples with Nb island. The authors attribute this to thematerial properties of Nb.

AB - Two different types of Cooper pair transistors, with Al and Nb islands, have been investigated in atunable electromagnetic environment. The device with an Al island demonstrates gate chargemodulation with 2e periodicity in a wide range of environmental impedances at bath temperaturesbelow 340 mK. Contrary to the results of the Al sample, the authors were not able to detect 2eperiodicity under any conditions on similar samples with Nb island. The authors attribute this to thematerial properties of Nb.

U2 - 10.1063/1.2768897

DO - 10.1063/1.2768897

M3 - Journal article

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 063512

ER -