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p-channel thin-film transistors based on spray-coated Cu2O films

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • Pichaya Pattanasattayavong
  • Stuart Thomas
  • George Adamopoulos
  • Martyn A. McLachlan
  • Thomas D. Anthopoulos
Article number163505
<mark>Journal publication date</mark>22/04/2013
<mark>Journal</mark>Applied Physics Letters
Issue number16
Number of pages4
Publication StatusPublished
<mark>Original language</mark>English


Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1.