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p-channel thin-film transistors based on spray-coated Cu2O films

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p-channel thin-film transistors based on spray-coated Cu2O films. / Pattanasattayavong, Pichaya; Thomas, Stuart; Adamopoulos, George et al.
In: Applied Physics Letters, Vol. 102, No. 16, 163505, 22.04.2013.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Pattanasattayavong, P, Thomas, S, Adamopoulos, G, McLachlan, MA & Anthopoulos, TD 2013, 'p-channel thin-film transistors based on spray-coated Cu2O films', Applied Physics Letters, vol. 102, no. 16, 163505. https://doi.org/10.1063/1.4803085

APA

Pattanasattayavong, P., Thomas, S., Adamopoulos, G., McLachlan, M. A., & Anthopoulos, T. D. (2013). p-channel thin-film transistors based on spray-coated Cu2O films. Applied Physics Letters, 102(16), Article 163505. https://doi.org/10.1063/1.4803085

Vancouver

Pattanasattayavong P, Thomas S, Adamopoulos G, McLachlan MA, Anthopoulos TD. p-channel thin-film transistors based on spray-coated Cu2O films. Applied Physics Letters. 2013 Apr 22;102(16):163505. doi: 10.1063/1.4803085

Author

Pattanasattayavong, Pichaya ; Thomas, Stuart ; Adamopoulos, George et al. / p-channel thin-film transistors based on spray-coated Cu2O films. In: Applied Physics Letters. 2013 ; Vol. 102, No. 16.

Bibtex

@article{78acd03b22094cdd96b984e918bc75c5,
title = "p-channel thin-film transistors based on spray-coated Cu2O films",
abstract = "Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1.",
keywords = "copper compounds, field effect transistors, gold , hole mobility , optical constants , pyrolysis, silicon compounds, spray coatings, thin film transistors, thin films, X-ray diffraction",
author = "Pichaya Pattanasattayavong and Stuart Thomas and George Adamopoulos and McLachlan, {Martyn A.} and Anthopoulos, {Thomas D.}",
year = "2013",
month = apr,
day = "22",
doi = "10.1063/1.4803085",
language = "English",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "16",

}

RIS

TY - JOUR

T1 - p-channel thin-film transistors based on spray-coated Cu2O films

AU - Pattanasattayavong, Pichaya

AU - Thomas, Stuart

AU - Adamopoulos, George

AU - McLachlan, Martyn A.

AU - Anthopoulos, Thomas D.

PY - 2013/4/22

Y1 - 2013/4/22

N2 - Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1.

AB - Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1.

KW - copper compounds

KW - field effect transistors

KW - gold

KW - hole mobility

KW - optical constants

KW - pyrolysis

KW - silicon compounds

KW - spray coatings

KW - thin film transistors

KW - thin films

KW - X-ray diffraction

U2 - 10.1063/1.4803085

DO - 10.1063/1.4803085

M3 - Journal article

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 163505

ER -