Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - p-channel thin-film transistors based on spray-coated Cu2O films
AU - Pattanasattayavong, Pichaya
AU - Thomas, Stuart
AU - Adamopoulos, George
AU - McLachlan, Martyn A.
AU - Anthopoulos, Thomas D.
PY - 2013/4/22
Y1 - 2013/4/22
N2 - Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1.
AB - Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1.
KW - copper compounds
KW - field effect transistors
KW - gold
KW - hole mobility
KW - optical constants
KW - pyrolysis
KW - silicon compounds
KW - spray coatings
KW - thin film transistors
KW - thin films
KW - X-ray diffraction
U2 - 10.1063/1.4803085
DO - 10.1063/1.4803085
M3 - Journal article
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
M1 - 163505
ER -