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Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

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Photoluminescence in InAsN epilayers grown by molecular beam epitaxy. / Zhuang, Q.; Godenir, A.; Krier, A.
In: Journal of Physics D: Applied Physics, Vol. 41, No. 13, 10.06.2008, p. 132002.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhuang, Q, Godenir, A & Krier, A 2008, 'Photoluminescence in InAsN epilayers grown by molecular beam epitaxy', Journal of Physics D: Applied Physics, vol. 41, no. 13, pp. 132002. https://doi.org/10.1088/0022-3727/41/13/132002

APA

Zhuang, Q., Godenir, A., & Krier, A. (2008). Photoluminescence in InAsN epilayers grown by molecular beam epitaxy. Journal of Physics D: Applied Physics, 41(13), 132002. https://doi.org/10.1088/0022-3727/41/13/132002

Vancouver

Zhuang Q, Godenir A, Krier A. Photoluminescence in InAsN epilayers grown by molecular beam epitaxy. Journal of Physics D: Applied Physics. 2008 Jun 10;41(13):132002. doi: 10.1088/0022-3727/41/13/132002

Author

Zhuang, Q. ; Godenir, A. ; Krier, A. / Photoluminescence in InAsN epilayers grown by molecular beam epitaxy. In: Journal of Physics D: Applied Physics. 2008 ; Vol. 41, No. 13. pp. 132002.

Bibtex

@article{f06393ad3b7545f18e7c52c00f3b9da5,
title = "Photoluminescence in InAsN epilayers grown by molecular beam epitaxy",
abstract = "We report the study of photoluminescence ( PL) spectroscopy in InAsN epilayers grown by molecular beam epitaxy. All the samples exhibit intense PL emission which persists up to room temperature. Low temperature PL spectra demonstrate double-peak emissions. The dependences of the PL spectra on temperature, laser excitation power and nitrogen composition were investigated. We identified that the short wavelength and long wavelength emissions originate from the band-band transition and the localized states-valence band transition, respectively. The direct observation of the band-band transition implies the high quality of the materials, and a band-gap energy reduction of similar to 63 meV at 4 K with 1% nitrogen incorporation was deduced.",
author = "Q. Zhuang and A. Godenir and A. Krier",
note = "Article number: 132002",
year = "2008",
month = jun,
day = "10",
doi = "10.1088/0022-3727/41/13/132002",
language = "English",
volume = "41",
pages = "132002",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "13",

}

RIS

TY - JOUR

T1 - Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

AU - Zhuang, Q.

AU - Godenir, A.

AU - Krier, A.

N1 - Article number: 132002

PY - 2008/6/10

Y1 - 2008/6/10

N2 - We report the study of photoluminescence ( PL) spectroscopy in InAsN epilayers grown by molecular beam epitaxy. All the samples exhibit intense PL emission which persists up to room temperature. Low temperature PL spectra demonstrate double-peak emissions. The dependences of the PL spectra on temperature, laser excitation power and nitrogen composition were investigated. We identified that the short wavelength and long wavelength emissions originate from the band-band transition and the localized states-valence band transition, respectively. The direct observation of the band-band transition implies the high quality of the materials, and a band-gap energy reduction of similar to 63 meV at 4 K with 1% nitrogen incorporation was deduced.

AB - We report the study of photoluminescence ( PL) spectroscopy in InAsN epilayers grown by molecular beam epitaxy. All the samples exhibit intense PL emission which persists up to room temperature. Low temperature PL spectra demonstrate double-peak emissions. The dependences of the PL spectra on temperature, laser excitation power and nitrogen composition were investigated. We identified that the short wavelength and long wavelength emissions originate from the band-band transition and the localized states-valence band transition, respectively. The direct observation of the band-band transition implies the high quality of the materials, and a band-gap energy reduction of similar to 63 meV at 4 K with 1% nitrogen incorporation was deduced.

U2 - 10.1088/0022-3727/41/13/132002

DO - 10.1088/0022-3727/41/13/132002

M3 - Journal article

VL - 41

SP - 132002

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 13

ER -