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Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. / de la Mare, M.; Carrington, P. J.; Wheatley, R. et al.
In: Journal of Physics D: Applied Physics, Vol. 43, No. 34, 01.09.2010, p. 345103.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

de la Mare, M, Carrington, PJ, Wheatley, R, Zhuang, Q, Beanland, R, Sanchez, AM, Krier, A & EPSRC Studentship for MDLM (Funder) 2010, 'Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.', Journal of Physics D: Applied Physics, vol. 43, no. 34, pp. 345103. https://doi.org/10.1088/0022-3727/43/34/345103

APA

de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M., Krier, A., & EPSRC Studentship for MDLM (Funder) (2010). Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics, 43(34), 345103. https://doi.org/10.1088/0022-3727/43/34/345103

Vancouver

de la Mare M, Carrington PJ, Wheatley R, Zhuang Q, Beanland R, Sanchez AM et al. Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics. 2010 Sept 1;43(34):345103. doi: 10.1088/0022-3727/43/34/345103

Author

de la Mare, M. ; Carrington, P. J. ; Wheatley, R. et al. / Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. In: Journal of Physics D: Applied Physics. 2010 ; Vol. 43, No. 34. pp. 345103.

Bibtex

@article{5af6aea6dbfd4b0b993a0510317b3dfa,
title = "Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.",
abstract = "We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.",
author = "{de la Mare}, M. and Carrington, {P. J.} and R. Wheatley and Q. Zhuang and R. Beanland and Sanchez, {A. M.} and A. Krier and {EPSRC Studentship for MDLM (Funder)}",
year = "2010",
month = sep,
day = "1",
doi = "10.1088/0022-3727/43/34/345103",
language = "English",
volume = "43",
pages = "345103",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "34",

}

RIS

TY - JOUR

T1 - Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

AU - de la Mare, M.

AU - Carrington, P. J.

AU - Wheatley, R.

AU - Zhuang, Q.

AU - Beanland, R.

AU - Sanchez, A. M.

AU - Krier, A.

AU - EPSRC Studentship for MDLM (Funder)

PY - 2010/9/1

Y1 - 2010/9/1

N2 - We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.

AB - We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.

U2 - 10.1088/0022-3727/43/34/345103

DO - 10.1088/0022-3727/43/34/345103

M3 - Journal article

VL - 43

SP - 345103

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 34

ER -