Standard
Harvard
Kumar, A, Dar, MF
, Hodgson, P, Lane, D, Carrington, P, Delli, E, Beanland, R, Mehrotra, S
, Hayne, M & Dasgupta, A 2025, '
Physics, modeling, and benchmarking of ULTRARAM: A compoundsemiconductor-based memory device',
Journal of Applied Physics, vol. 138, no. 9, 095702.
https://doi.org/10.1063/5.0269780APA
Kumar, A., Dar, M. F.
, Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R., Mehrotra, S.
, Hayne, M., & Dasgupta, A. (2025).
Physics, modeling, and benchmarking of ULTRARAM: A compoundsemiconductor-based memory device.
Journal of Applied Physics,
138(9), Article 095702.
https://doi.org/10.1063/5.0269780Vancouver
Author
Bibtex
@article{d82fd345457644aab9d89ca48a9c3057,
title = "Physics, modeling, and benchmarking of ULTRARAM: A compoundsemiconductor-based memory device",
author = "Abhishek Kumar and Dar, {Musaibh Farooq} and Peter Hodgson and Dominic Lane and Peter Carrington and Evangelia Delli and Richard Beanland and Shruti Mehrotra and Manus Hayne and Avirup Dasgupta",
year = "2025",
month = sep,
day = "7",
doi = "10.1063/5.0269780",
language = "English",
volume = "138",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "9",
}
RIS
TY - JOUR
T1 - Physics, modeling, and benchmarking of ULTRARAM
T2 - A compoundsemiconductor-based memory device
AU - Kumar, Abhishek
AU - Dar, Musaibh Farooq
AU - Hodgson, Peter
AU - Lane, Dominic
AU - Carrington, Peter
AU - Delli, Evangelia
AU - Beanland, Richard
AU - Mehrotra, Shruti
AU - Hayne, Manus
AU - Dasgupta, Avirup
PY - 2025/9/7
Y1 - 2025/9/7
U2 - 10.1063/5.0269780
DO - 10.1063/5.0269780
M3 - Journal article
VL - 138
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
M1 - 095702
ER -
