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Plasmons in realistic graphene/hexagonal boron nitride moiré patterns

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Plasmons in realistic graphene/hexagonal boron nitride moiré patterns. / Tomadin, A.; Polini, M.; Jung, J.
In: Physical review B, Vol. 99, No. 3, 035432, 15.01.2019.

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Tomadin A, Polini M, Jung J. Plasmons in realistic graphene/hexagonal boron nitride moiré patterns. Physical review B. 2019 Jan 15;99(3):035432. doi: 10.1103/PhysRevB.99.035432

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Tomadin, A. ; Polini, M. ; Jung, J. / Plasmons in realistic graphene/hexagonal boron nitride moiré patterns. In: Physical review B. 2019 ; Vol. 99, No. 3.

Bibtex

@article{be46a297b8ae4536b8066212e2c37354,
title = "Plasmons in realistic graphene/hexagonal boron nitride moir{\'e} patterns",
abstract = "van der Waals heterostructures employing graphene and hexagonal boron nitride (hBN) crystals have emerged as a promising platform for plasmonics thanks to the tunability of their collective modes with carrier density and record values for plasmonics figures of merit. In this paper we investigate theoretically the role of moir{\'e}-pattern superlattices in nearly aligned graphene on hBN by using a continuum-model Hamiltonian derived from ab initio calculations. We calculate the system's energy-loss function for a range of chemical potential values that are accessible in gated devices. Our calculations reveal that the electron-hole asymmetry of the moir{\'e} bands leads to a remarkable asymmetry of the plasmon dispersion between positive and negative chemical potentials, showcasing the intricate band structure and rich absorption spectrum across the secondary Dirac point gap for the hole bands. {\textcopyright} 2019 American Physical Society.",
author = "A. Tomadin and M. Polini and J. Jung",
note = "{\textcopyright} 2019 American Physical Society ",
year = "2019",
month = jan,
day = "15",
doi = "10.1103/PhysRevB.99.035432",
language = "English",
volume = "99",
journal = "Physical review B",
issn = "2469-9950",
publisher = "AMER PHYSICAL SOC",
number = "3",

}

RIS

TY - JOUR

T1 - Plasmons in realistic graphene/hexagonal boron nitride moiré patterns

AU - Tomadin, A.

AU - Polini, M.

AU - Jung, J.

N1 - © 2019 American Physical Society

PY - 2019/1/15

Y1 - 2019/1/15

N2 - van der Waals heterostructures employing graphene and hexagonal boron nitride (hBN) crystals have emerged as a promising platform for plasmonics thanks to the tunability of their collective modes with carrier density and record values for plasmonics figures of merit. In this paper we investigate theoretically the role of moiré-pattern superlattices in nearly aligned graphene on hBN by using a continuum-model Hamiltonian derived from ab initio calculations. We calculate the system's energy-loss function for a range of chemical potential values that are accessible in gated devices. Our calculations reveal that the electron-hole asymmetry of the moiré bands leads to a remarkable asymmetry of the plasmon dispersion between positive and negative chemical potentials, showcasing the intricate band structure and rich absorption spectrum across the secondary Dirac point gap for the hole bands. © 2019 American Physical Society.

AB - van der Waals heterostructures employing graphene and hexagonal boron nitride (hBN) crystals have emerged as a promising platform for plasmonics thanks to the tunability of their collective modes with carrier density and record values for plasmonics figures of merit. In this paper we investigate theoretically the role of moiré-pattern superlattices in nearly aligned graphene on hBN by using a continuum-model Hamiltonian derived from ab initio calculations. We calculate the system's energy-loss function for a range of chemical potential values that are accessible in gated devices. Our calculations reveal that the electron-hole asymmetry of the moiré bands leads to a remarkable asymmetry of the plasmon dispersion between positive and negative chemical potentials, showcasing the intricate band structure and rich absorption spectrum across the secondary Dirac point gap for the hole bands. © 2019 American Physical Society.

U2 - 10.1103/PhysRevB.99.035432

DO - 10.1103/PhysRevB.99.035432

M3 - Journal article

VL - 99

JO - Physical review B

JF - Physical review B

SN - 2469-9950

IS - 3

M1 - 035432

ER -