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Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions

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Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions. / Jung, Hyuntae; Kim, Yongmin; Jung, Kyooho et al.
In: Physical review B, Vol. 80, No. 12, 125413, 09.2009, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Jung, H, Kim, Y, Jung, K, Im, H, Pashkin, Y, Astafiev, O, Nakamura, Y, Lee, H, Miyamoto, Y & Tsai, JS 2009, 'Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions', Physical review B, vol. 80, no. 12, 125413, pp. -. https://doi.org/10.1103/PhysRevB.80.125413

APA

Jung, H., Kim, Y., Jung, K., Im, H., Pashkin, Y., Astafiev, O., Nakamura, Y., Lee, H., Miyamoto, Y., & Tsai, J. S. (2009). Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions. Physical review B, 80(12), -. Article 125413. https://doi.org/10.1103/PhysRevB.80.125413

Vancouver

Jung H, Kim Y, Jung K, Im H, Pashkin Y, Astafiev O et al. Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions. Physical review B. 2009 Sept;80(12):-. 125413. doi: 10.1103/PhysRevB.80.125413

Author

Jung, Hyuntae ; Kim, Yongmin ; Jung, Kyooho et al. / Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions. In: Physical review B. 2009 ; Vol. 80, No. 12. pp. -.

Bibtex

@article{28fdf74f4bf649e7b60f7b7c15ec5301,
title = "Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions",
abstract = "We show that the barrier profile of in situ grown AlOx tunnel barriers strongly depends on the material choices of the oxide-metal interface. By doing transport measurements on Al and Nb-based metal-oxide-metal tunnel junctions in a wide temperature range and using the phenomenological Simmons' model, we obtain barrier parameters that are qualitatively consistent with the values obtained from the first-principles calculations. The latter suggest that the formation of metal-induced gap states originating from the hybridization between the metallic bands and Al2O3 conduction band is responsible for the tunnel barrier modification. These findings are important for nanoelectronic devices containing tunnel junctions with a thin insulating layer.",
author = "Hyuntae Jung and Yongmin Kim and Kyooho Jung and Hyunsik Im and Yuri Pashkin and O. Astafiev and Y. Nakamura and Hosik Lee and Y. Miyamoto and Tsai, {J. S.}",
year = "2009",
month = sep,
doi = "10.1103/PhysRevB.80.125413",
language = "English",
volume = "80",
pages = "--",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "12",

}

RIS

TY - JOUR

T1 - Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions

AU - Jung, Hyuntae

AU - Kim, Yongmin

AU - Jung, Kyooho

AU - Im, Hyunsik

AU - Pashkin, Yuri

AU - Astafiev, O.

AU - Nakamura, Y.

AU - Lee, Hosik

AU - Miyamoto, Y.

AU - Tsai, J. S.

PY - 2009/9

Y1 - 2009/9

N2 - We show that the barrier profile of in situ grown AlOx tunnel barriers strongly depends on the material choices of the oxide-metal interface. By doing transport measurements on Al and Nb-based metal-oxide-metal tunnel junctions in a wide temperature range and using the phenomenological Simmons' model, we obtain barrier parameters that are qualitatively consistent with the values obtained from the first-principles calculations. The latter suggest that the formation of metal-induced gap states originating from the hybridization between the metallic bands and Al2O3 conduction band is responsible for the tunnel barrier modification. These findings are important for nanoelectronic devices containing tunnel junctions with a thin insulating layer.

AB - We show that the barrier profile of in situ grown AlOx tunnel barriers strongly depends on the material choices of the oxide-metal interface. By doing transport measurements on Al and Nb-based metal-oxide-metal tunnel junctions in a wide temperature range and using the phenomenological Simmons' model, we obtain barrier parameters that are qualitatively consistent with the values obtained from the first-principles calculations. The latter suggest that the formation of metal-induced gap states originating from the hybridization between the metallic bands and Al2O3 conduction band is responsible for the tunnel barrier modification. These findings are important for nanoelectronic devices containing tunnel junctions with a thin insulating layer.

U2 - 10.1103/PhysRevB.80.125413

DO - 10.1103/PhysRevB.80.125413

M3 - Journal article

VL - 80

SP - -

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 12

M1 - 125413

ER -