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Practical and fundamental impact of epitaxial graphene on quantum metrology

Research output: Contribution to Journal/Magazine › Literature review › peer-review

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Practical and fundamental impact of epitaxial graphene on quantum metrology. / Janssen, T. J. B. M.; Tzalenchuk, A.; Lara-Avila, S. et al.
In: Mapan, Vol. 28, No. 4, 12.2013, p. 239-250.

Research output: Contribution to Journal/Magazine › Literature review › peer-review

Harvard

Janssen, TJBM, Tzalenchuk, A, Lara-Avila, S, Kubatkin, S & Fal'ko, V 2013, 'Practical and fundamental impact of epitaxial graphene on quantum metrology', Mapan, vol. 28, no. 4, pp. 239-250. https://doi.org/10.1007/s12647-013-0064-y

APA

Janssen, T. J. B. M., Tzalenchuk, A., Lara-Avila, S., Kubatkin, S., & Fal'ko, V. (2013). Practical and fundamental impact of epitaxial graphene on quantum metrology. Mapan, 28(4), 239-250. https://doi.org/10.1007/s12647-013-0064-y

Vancouver

Janssen TJBM, Tzalenchuk A, Lara-Avila S, Kubatkin S, Fal'ko V. Practical and fundamental impact of epitaxial graphene on quantum metrology. Mapan. 2013 Dec;28(4):239-250. doi: 10.1007/s12647-013-0064-y

Author

Janssen, T. J. B. M. ; Tzalenchuk, A. ; Lara-Avila, S. et al. / Practical and fundamental impact of epitaxial graphene on quantum metrology. In: Mapan. 2013 ; Vol. 28, No. 4. pp. 239-250.

Bibtex

@article{d5c047aa79b0456497b73fd8cbd7d62c,
title = "Practical and fundamental impact of epitaxial graphene on quantum metrology",
abstract = "The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest in the metrological community. Here was a material which was completely different from commonly used semiconductor systems and which seemed to have some uniques properties which could make it ideally suited for high-precision resistance metrology. However, measuring the QHE in graphene turned out to be not so simple as first thought. In particular the small size of exfoliated graphene samples made precision measurements difficult. This dramatically changed with the development of large-area graphene grown on SiC and in this short review paper we discuss the journey from first observation to the highest-ever precision comparison of the QHE.",
keywords = "Graphene, quantum Hall effect, Metrology, SI, Epitaxial graphene, QUANTIZED HALL RESISTANCE, GALLIUM-ARSENIDE, CAPACITANCE, STANDARD, GAS",
author = "Janssen, {T. J. B. M.} and A. Tzalenchuk and S. Lara-Avila and S. Kubatkin and V. Fal'ko",
year = "2013",
month = dec,
doi = "10.1007/s12647-013-0064-y",
language = "English",
volume = "28",
pages = "239--250",
journal = "Mapan",
issn = "0970-3950",
publisher = "Springer India",
number = "4",

}

RIS

TY - JOUR

T1 - Practical and fundamental impact of epitaxial graphene on quantum metrology

AU - Janssen, T. J. B. M.

AU - Tzalenchuk, A.

AU - Lara-Avila, S.

AU - Kubatkin, S.

AU - Fal'ko, V.

PY - 2013/12

Y1 - 2013/12

N2 - The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest in the metrological community. Here was a material which was completely different from commonly used semiconductor systems and which seemed to have some uniques properties which could make it ideally suited for high-precision resistance metrology. However, measuring the QHE in graphene turned out to be not so simple as first thought. In particular the small size of exfoliated graphene samples made precision measurements difficult. This dramatically changed with the development of large-area graphene grown on SiC and in this short review paper we discuss the journey from first observation to the highest-ever precision comparison of the QHE.

AB - The discovery 8 years ago of the quantum Hall effect (QHE) in graphene sparked an immediate interest in the metrological community. Here was a material which was completely different from commonly used semiconductor systems and which seemed to have some uniques properties which could make it ideally suited for high-precision resistance metrology. However, measuring the QHE in graphene turned out to be not so simple as first thought. In particular the small size of exfoliated graphene samples made precision measurements difficult. This dramatically changed with the development of large-area graphene grown on SiC and in this short review paper we discuss the journey from first observation to the highest-ever precision comparison of the QHE.

KW - Graphene

KW - quantum Hall effect

KW - Metrology

KW - SI

KW - Epitaxial graphene

KW - QUANTIZED HALL RESISTANCE

KW - GALLIUM-ARSENIDE

KW - CAPACITANCE

KW - STANDARD

KW - GAS

U2 - 10.1007/s12647-013-0064-y

DO - 10.1007/s12647-013-0064-y

M3 - Literature review

VL - 28

SP - 239

EP - 250

JO - Mapan

JF - Mapan

SN - 0970-3950

IS - 4

ER -