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Precision comparison of the quantum Hall effect in graphene and gallium arsenide

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Precision comparison of the quantum Hall effect in graphene and gallium arsenide. / Janssen, T. J. B. M.; Williams, J. M.; Fletcher, N. E. et al.
In: Metrologia, Vol. 49, No. 3, 06.2012, p. 294-306.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Janssen, TJBM, Williams, JM, Fletcher, NE, Goebel, R, Tzalenchuk, A, Yakimova, R, Lara-Avila, S, Kubatkin, S & Falko, V 2012, 'Precision comparison of the quantum Hall effect in graphene and gallium arsenide', Metrologia, vol. 49, no. 3, pp. 294-306. https://doi.org/10.1088/0026-1394/49/3/294

APA

Janssen, T. J. B. M., Williams, J. M., Fletcher, N. E., Goebel, R., Tzalenchuk, A., Yakimova, R., Lara-Avila, S., Kubatkin, S., & Falko, V. (2012). Precision comparison of the quantum Hall effect in graphene and gallium arsenide. Metrologia, 49(3), 294-306. https://doi.org/10.1088/0026-1394/49/3/294

Vancouver

Janssen TJBM, Williams JM, Fletcher NE, Goebel R, Tzalenchuk A, Yakimova R et al. Precision comparison of the quantum Hall effect in graphene and gallium arsenide. Metrologia. 2012 Jun;49(3):294-306. doi: 10.1088/0026-1394/49/3/294

Author

Janssen, T. J. B. M. ; Williams, J. M. ; Fletcher, N. E. et al. / Precision comparison of the quantum Hall effect in graphene and gallium arsenide. In: Metrologia. 2012 ; Vol. 49, No. 3. pp. 294-306.

Bibtex

@article{6dee25a4ad244088a3698a12c5ba746c,
title = "Precision comparison of the quantum Hall effect in graphene and gallium arsenide",
abstract = "The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well-known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantized resistance values within the relative standard uncertainty of our measurement of 8.7 x 10(-11). The result places new tighter limits on any possible correction terms to the simple relation R-K = h/e(2), and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterization of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.",
author = "Janssen, {T. J. B. M.} and Williams, {J. M.} and Fletcher, {N. E.} and R. Goebel and A. Tzalenchuk and R. Yakimova and S. Lara-Avila and S. Kubatkin and Vladimir Falko",
year = "2012",
month = jun,
doi = "10.1088/0026-1394/49/3/294",
language = "English",
volume = "49",
pages = "294--306",
journal = "Metrologia",
issn = "0026-1394",
publisher = "IOP Publishing Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - Precision comparison of the quantum Hall effect in graphene and gallium arsenide

AU - Janssen, T. J. B. M.

AU - Williams, J. M.

AU - Fletcher, N. E.

AU - Goebel, R.

AU - Tzalenchuk, A.

AU - Yakimova, R.

AU - Lara-Avila, S.

AU - Kubatkin, S.

AU - Falko, Vladimir

PY - 2012/6

Y1 - 2012/6

N2 - The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well-known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantized resistance values within the relative standard uncertainty of our measurement of 8.7 x 10(-11). The result places new tighter limits on any possible correction terms to the simple relation R-K = h/e(2), and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterization of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.

AB - The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well-known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantized resistance values within the relative standard uncertainty of our measurement of 8.7 x 10(-11). The result places new tighter limits on any possible correction terms to the simple relation R-K = h/e(2), and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterization of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.

U2 - 10.1088/0026-1394/49/3/294

DO - 10.1088/0026-1394/49/3/294

M3 - Journal article

VL - 49

SP - 294

EP - 306

JO - Metrologia

JF - Metrologia

SN - 0026-1394

IS - 3

ER -