Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

Physics

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https://doi.org/10.1002/adfm.202300686
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Keywords

Electrochemistry, Condensed Matter Physics, Biomaterials, Electronic, Optical and Magnetic Materials

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Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors. / Ahmad, Waqas; Pan, Liang; Khan, Karim et al.
In: Advanced Functional Materials, 14.03.2023.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Bibtex

@article{b88137fa29304d1d8059d8004aaa1083,

title = "Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors",

abstract = "Van der Waals (vdWs) heterostructures enable bandgap engineering of different 2D materials to realize the interlayer transition via type-II band alignment leading to broaden spectrum that is beyond the cut-off wavelength of individual 2D materials. Interlayer transition has a significant effect on the optoelectronic performance of vdWs heterostructure devices, and strong interlayer transition in 2D vdWs heterojunction is always demandable for sufficient charge transfer and rapid speed response. Herein, a state-of-the-art review is presented on recent progress on interlayer transition in vdWs heterostructures for near-infrared (NIR) photodetectors. First, the general synthesis techniques for vdWs heterostructures, band alignments in the vdWs heterostructures are provided. Then, the mechanism of interlayer transition in vdWs heterostructure and recent progress on interlayer transition in vdWs heterostructures for NIR photodetectors are summarized. Afterward, some worthy applications of NIR photodetectors are reviewed in related areas of this topic. At the last, an outlook, challenges, and future research directions of vdWs heterostructures for photodetectors at broaden response spectrum are presented.",

keywords = "Electrochemistry, Condensed Matter Physics, Biomaterials, Electronic, Optical and Magnetic Materials",

author = "Waqas Ahmad and Liang Pan and Karim Khan and Lingpu Jia and Qiandong Zhuang and Zhiming Wang",

year = "2023",

month = mar,

day = "14",

doi = "10.1002/adfm.202300686",

language = "English",

journal = "Advanced Functional Materials",

issn = "1616-301X",

publisher = "John Wiley & Sons, Ltd",

}

RIS

TY - JOUR

T1 - Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

AU - Ahmad, Waqas

AU - Pan, Liang

AU - Khan, Karim

AU - Jia, Lingpu

AU - Zhuang, Qiandong

AU - Wang, Zhiming

PY - 2023/3/14

Y1 - 2023/3/14

N2 - Van der Waals (vdWs) heterostructures enable bandgap engineering of different 2D materials to realize the interlayer transition via type-II band alignment leading to broaden spectrum that is beyond the cut-off wavelength of individual 2D materials. Interlayer transition has a significant effect on the optoelectronic performance of vdWs heterostructure devices, and strong interlayer transition in 2D vdWs heterojunction is always demandable for sufficient charge transfer and rapid speed response. Herein, a state-of-the-art review is presented on recent progress on interlayer transition in vdWs heterostructures for near-infrared (NIR) photodetectors. First, the general synthesis techniques for vdWs heterostructures, band alignments in the vdWs heterostructures are provided. Then, the mechanism of interlayer transition in vdWs heterostructure and recent progress on interlayer transition in vdWs heterostructures for NIR photodetectors are summarized. Afterward, some worthy applications of NIR photodetectors are reviewed in related areas of this topic. At the last, an outlook, challenges, and future research directions of vdWs heterostructures for photodetectors at broaden response spectrum are presented.

AB - Van der Waals (vdWs) heterostructures enable bandgap engineering of different 2D materials to realize the interlayer transition via type-II band alignment leading to broaden spectrum that is beyond the cut-off wavelength of individual 2D materials. Interlayer transition has a significant effect on the optoelectronic performance of vdWs heterostructure devices, and strong interlayer transition in 2D vdWs heterojunction is always demandable for sufficient charge transfer and rapid speed response. Herein, a state-of-the-art review is presented on recent progress on interlayer transition in vdWs heterostructures for near-infrared (NIR) photodetectors. First, the general synthesis techniques for vdWs heterostructures, band alignments in the vdWs heterostructures are provided. Then, the mechanism of interlayer transition in vdWs heterostructure and recent progress on interlayer transition in vdWs heterostructures for NIR photodetectors are summarized. Afterward, some worthy applications of NIR photodetectors are reviewed in related areas of this topic. At the last, an outlook, challenges, and future research directions of vdWs heterostructures for photodetectors at broaden response spectrum are presented.

KW - Electrochemistry

KW - Condensed Matter Physics

KW - Biomaterials

KW - Electronic, Optical and Magnetic Materials

U2 - 10.1002/adfm.202300686

DO - 10.1002/adfm.202300686

M3 - Journal article

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

ER -

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