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Quantifying anisotropic thermal transport in two-dimensional perovskite (PEA2PbI4) through cross-sectional scanning thermal microscopy

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Quantifying anisotropic thermal transport in two-dimensional perovskite (PEA2PbI4) through cross-sectional scanning thermal microscopy. / Maiti, Abhishek; Agarwal, Khushboo; Gonzalez-Munoz, Sergio et al.
In: Physical Review Materials, Vol. 7, No. 2, 023801, 03.02.2023.

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@article{8c6de6e6b93b45149223c6563ce57593,
title = "Quantifying anisotropic thermal transport in two-dimensional perovskite (PEA2PbI4) through cross-sectional scanning thermal microscopy",
abstract = "The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.",
keywords = "SThM, Scanning thermal microscopy, Anisotropy, 2D materials, solar cells, BEXP",
author = "Abhishek Maiti and Khushboo Agarwal and Sergio Gonzalez-Munoz and Kolosov, {Oleg V.}",
note = "{\textcopyright} 2022 American Physical Society ",
year = "2023",
month = feb,
day = "3",
doi = "10.1103/PhysRevMaterials.7.023801",
language = "English",
volume = "7",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "2",

}

RIS

TY - JOUR

T1 - Quantifying anisotropic thermal transport in two-dimensional perovskite (PEA2PbI4) through cross-sectional scanning thermal microscopy

AU - Maiti, Abhishek

AU - Agarwal, Khushboo

AU - Gonzalez-Munoz, Sergio

AU - Kolosov, Oleg V.

N1 - © 2022 American Physical Society

PY - 2023/2/3

Y1 - 2023/2/3

N2 - The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.

AB - The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry.

KW - SThM

KW - Scanning thermal microscopy

KW - Anisotropy

KW - 2D materials

KW - solar cells

KW - BEXP

U2 - 10.1103/PhysRevMaterials.7.023801

DO - 10.1103/PhysRevMaterials.7.023801

M3 - Journal article

VL - 7

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 2

M1 - 023801

ER -