Home > Research > Publications & Outputs > Quantifying thermal transport in buried semicon...

Electronic data

  • d0nr08768h

    Accepted author manuscript, 1.43 MB, PDF document

    Available under license: CC BY-NC: Creative Commons Attribution-NonCommercial 4.0 International License

Links

Text available via DOI:

View graph of relations

Quantifying thermal transport in buried semiconductor nanostructures via Cross-Sectional Scanning Thermal Microscopy

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

Quantifying thermal transport in buried semiconductor nanostructures via Cross-Sectional Scanning Thermal Microscopy. / Spiece, Jean; Evangeli, Charalambos; Robson, Alexander et al.

In: Nanoscale, Vol. 13, No. 24, 28.06.2021, p. 10829-10836.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

APA

Vancouver

Spiece J, Evangeli C, Robson A, Sachat A, Hanel L, Alonso M et al. Quantifying thermal transport in buried semiconductor nanostructures via Cross-Sectional Scanning Thermal Microscopy. Nanoscale. 2021 Jun 28;13(24):10829-10836. Epub 2021 May 19. doi: 10.1039/D0NR08768H

Author

Bibtex

@article{0e18554443544a5b902d2b35854aa563,
title = "Quantifying thermal transport in buried semiconductor nanostructures via Cross-Sectional Scanning Thermal Microscopy",
abstract = "Managing thermal transport in nanostructures became a major challenge in development of active microelectronic, optoelectronic and thermoelectric devices, stalling the famous Moore{\textquoteright}s law of clock speed increase of microprocessors for more than a decade. To find the solution to this and linked problems, one needs to quantify the ability of these nanostructures to conduct the heat, with adequate precision, nanoscale resolution and, essentially, for the internal layers buried in the 3D structure of modern semiconductor devices. Existing thermoreflectance measurements and “hot wire” 3ω methods cannot be effectively used at lateral dimensions of the layer below a micrometre, moreover, they are sensitive mainly to the surface layers of a relatively high thickness of above 100 nm. The scanning thermal microscopy (SThM) while providing required lateral resolution, provides mainly qualitative data of the layer conductance due to undefined tip-surface and interlayer contact resistances. In this work, we use cross-sectional SThM (xSThM), a new method combining a scanning probe microscopy compatible Ar-ion beam exit nano-cross-sectioning (BEXP) and SThM, to quantify thermal conductance in complex multilayer nanostructures and to measure local thermal conductivity of oxide and semiconductor materials such as SiO2, SiGex and GeSny. By using the new method that provides 10 nm thickness and few tens of nm lateral resolution, we pinpoint crystalline defects in SiGe/GeSn optoelectronic materials by measuring nanoscale thermal transport and quantifying thermal conductivity and interfacial thermal resistance in thin spin-on materials used in Extreme ultraviolet lithography (eUV) fabrication processing. The new capability of xSThM demonstrated here for the first time is poised to provide vital insights for thermal transport in advanced nanoscale materials and devices.",
keywords = "SThM, nanothermal, semiconductors, NANOSTRUCTURES, nanoscale, SPM, BEXP, Cross-section",
author = "Jean Spiece and Charalambos Evangeli and Alexander Robson and Alexandros Sachat and Linda Hanel and M Alonso and Miquel Garriga and Benjamin Robinson and M Oehme and Jorg Schulze and F Alzina and Sotomayor-Torres, {Clivia Marfa} and Oleg Kolosov",
year = "2021",
month = jun,
day = "28",
doi = "10.1039/D0NR08768H",
language = "English",
volume = "13",
pages = "10829--10836",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "24",

}

RIS

TY - JOUR

T1 - Quantifying thermal transport in buried semiconductor nanostructures via Cross-Sectional Scanning Thermal Microscopy

AU - Spiece, Jean

AU - Evangeli, Charalambos

AU - Robson, Alexander

AU - Sachat, Alexandros

AU - Hanel, Linda

AU - Alonso, M

AU - Garriga, Miquel

AU - Robinson, Benjamin

AU - Oehme, M

AU - Schulze, Jorg

AU - Alzina, F

AU - Sotomayor-Torres, Clivia Marfa

AU - Kolosov, Oleg

PY - 2021/6/28

Y1 - 2021/6/28

N2 - Managing thermal transport in nanostructures became a major challenge in development of active microelectronic, optoelectronic and thermoelectric devices, stalling the famous Moore’s law of clock speed increase of microprocessors for more than a decade. To find the solution to this and linked problems, one needs to quantify the ability of these nanostructures to conduct the heat, with adequate precision, nanoscale resolution and, essentially, for the internal layers buried in the 3D structure of modern semiconductor devices. Existing thermoreflectance measurements and “hot wire” 3ω methods cannot be effectively used at lateral dimensions of the layer below a micrometre, moreover, they are sensitive mainly to the surface layers of a relatively high thickness of above 100 nm. The scanning thermal microscopy (SThM) while providing required lateral resolution, provides mainly qualitative data of the layer conductance due to undefined tip-surface and interlayer contact resistances. In this work, we use cross-sectional SThM (xSThM), a new method combining a scanning probe microscopy compatible Ar-ion beam exit nano-cross-sectioning (BEXP) and SThM, to quantify thermal conductance in complex multilayer nanostructures and to measure local thermal conductivity of oxide and semiconductor materials such as SiO2, SiGex and GeSny. By using the new method that provides 10 nm thickness and few tens of nm lateral resolution, we pinpoint crystalline defects in SiGe/GeSn optoelectronic materials by measuring nanoscale thermal transport and quantifying thermal conductivity and interfacial thermal resistance in thin spin-on materials used in Extreme ultraviolet lithography (eUV) fabrication processing. The new capability of xSThM demonstrated here for the first time is poised to provide vital insights for thermal transport in advanced nanoscale materials and devices.

AB - Managing thermal transport in nanostructures became a major challenge in development of active microelectronic, optoelectronic and thermoelectric devices, stalling the famous Moore’s law of clock speed increase of microprocessors for more than a decade. To find the solution to this and linked problems, one needs to quantify the ability of these nanostructures to conduct the heat, with adequate precision, nanoscale resolution and, essentially, for the internal layers buried in the 3D structure of modern semiconductor devices. Existing thermoreflectance measurements and “hot wire” 3ω methods cannot be effectively used at lateral dimensions of the layer below a micrometre, moreover, they are sensitive mainly to the surface layers of a relatively high thickness of above 100 nm. The scanning thermal microscopy (SThM) while providing required lateral resolution, provides mainly qualitative data of the layer conductance due to undefined tip-surface and interlayer contact resistances. In this work, we use cross-sectional SThM (xSThM), a new method combining a scanning probe microscopy compatible Ar-ion beam exit nano-cross-sectioning (BEXP) and SThM, to quantify thermal conductance in complex multilayer nanostructures and to measure local thermal conductivity of oxide and semiconductor materials such as SiO2, SiGex and GeSny. By using the new method that provides 10 nm thickness and few tens of nm lateral resolution, we pinpoint crystalline defects in SiGe/GeSn optoelectronic materials by measuring nanoscale thermal transport and quantifying thermal conductivity and interfacial thermal resistance in thin spin-on materials used in Extreme ultraviolet lithography (eUV) fabrication processing. The new capability of xSThM demonstrated here for the first time is poised to provide vital insights for thermal transport in advanced nanoscale materials and devices.

KW - SThM

KW - nanothermal

KW - semiconductors

KW - NANOSTRUCTURES

KW - nanoscale

KW - SPM

KW - BEXP

KW - Cross-section

U2 - 10.1039/D0NR08768H

DO - 10.1039/D0NR08768H

M3 - Journal article

VL - 13

SP - 10829

EP - 10836

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 24

ER -