Thermal transport is one of the key factors in defining the performance of thermoelectric (TE) materials, given that most of these cannot combine high power factor with low thermal conductivity. Nevertheless, thermal transport in van der Waals (vdW) materials and their heterostructures could be tweaked, leaving an open platform for new TE applications. In particular, indium selenide (InSe) shows high TE potential due to advantageous electrical and thermal properties, increasing the TE efficiency. Here we quantify the thermal transport in γ-InSe nanolayers via x-section scanning thermal microscopy (xSThM), providing a key insight to its in-plane and cross-plane thermal conductivities as well as interfacial thermal resistance to the substrate.