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Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene. / Chua, Cassandra; Connolly, Malcolm; Lartsev, Arseniy et al.
In: Nano Letters, Vol. 14, No. 6, 06.2014, p. 3369-3373.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Chua, C, Connolly, M, Lartsev, A, Yager, T, Lara-Avila, S, Kubatkin, S, Kopylov, S, Falko, V, Yakimova, R, Pearce, R, Janssen, TJBM, Tzaenchuk, A & Smith, CG 2014, 'Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene', Nano Letters, vol. 14, no. 6, pp. 3369-3373. https://doi.org/10.1021/nl5008757

APA

Chua, C., Connolly, M., Lartsev, A., Yager, T., Lara-Avila, S., Kubatkin, S., Kopylov, S., Falko, V., Yakimova, R., Pearce, R., Janssen, T. J. B. M., Tzaenchuk, A., & Smith, C. G. (2014). Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene. Nano Letters, 14(6), 3369-3373. https://doi.org/10.1021/nl5008757

Vancouver

Chua C, Connolly M, Lartsev A, Yager T, Lara-Avila S, Kubatkin S et al. Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene. Nano Letters. 2014 Jun;14(6):3369-3373. Epub 2014 May 21. doi: 10.1021/nl5008757

Author

Chua, Cassandra ; Connolly, Malcolm ; Lartsev, Arseniy et al. / Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene. In: Nano Letters. 2014 ; Vol. 14, No. 6. pp. 3369-3373.

Bibtex

@article{615c6b7dd819464cb7f79653946be282,
title = "Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene",
abstract = "We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.",
keywords = "SiC epitaxial graphene, quantum hall effect, scanning gate microscopy, monolayer and bilayer graphene, resistance metrology, quantum point contact, BERRYS PHASE, MICROSCOPY",
author = "Cassandra Chua and Malcolm Connolly and Arseniy Lartsev and Tom Yager and Samuel Lara-Avila and Sergey Kubatkin and Sergey Kopylov and Vladimir Falko and Rositza Yakimova and Ruth Pearce and Janssen, {T. J. B. M.} and Alexander Tzaenchuk and Smith, {Charles G.}",
year = "2014",
month = jun,
doi = "10.1021/nl5008757",
language = "English",
volume = "14",
pages = "3369--3373",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "6",

}

RIS

TY - JOUR

T1 - Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

AU - Chua, Cassandra

AU - Connolly, Malcolm

AU - Lartsev, Arseniy

AU - Yager, Tom

AU - Lara-Avila, Samuel

AU - Kubatkin, Sergey

AU - Kopylov, Sergey

AU - Falko, Vladimir

AU - Yakimova, Rositza

AU - Pearce, Ruth

AU - Janssen, T. J. B. M.

AU - Tzaenchuk, Alexander

AU - Smith, Charles G.

PY - 2014/6

Y1 - 2014/6

N2 - We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

AB - We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

KW - SiC epitaxial graphene

KW - quantum hall effect

KW - scanning gate microscopy

KW - monolayer and bilayer graphene

KW - resistance metrology

KW - quantum point contact

KW - BERRYS PHASE

KW - MICROSCOPY

U2 - 10.1021/nl5008757

DO - 10.1021/nl5008757

M3 - Journal article

VL - 14

SP - 3369

EP - 3373

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 6

ER -